Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3

doi:10.1088/1674-1056/28/4/048502

Abstract

A solar-blind photodetector is fabricated on single crystal Ga₂O₃ based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet (UV) transmittance. The quantum efficiency is about 400% at 42 V. The Ga₂O₃ photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible (=3213) and solar-blind/UV (=834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature (RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.

Keywords: Ga₂O₃ single crystal solar-blind photodetector high temperature

Received: 20 November 2018
Revised: 05 January 2019
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	95.85.Mt	(Ultraviolet (10-300 nm))
	85.30.Kk	(Junction diodes)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)

Fund:

Project supported by National Key Research and Development Plan of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), the National Natural Science Foundation of China (Grant Nos. 61574026, 11675198, 61774072, and 11405017), the Natural Science Foundation of Liaoning Province, China (Grant Nos. 201602453 and 201602176), China Postdoctoral Science Foundation Funded Project (Grant No. 2016M591434), and the Dalian Science and Technology Innovation Fund (Grant No. 2018J12GX060).

Corresponding Authors: Hongwei Liang
E-mail: hwliang@dlut.edu.cn

Cite this article:

Chao Yang(杨超), Hongwei Liang(梁红伟), Zhenzhong Zhang(张振中), Xiaochuan Xia(夏晓川), Heqiu Zhang(张贺秋), Rensheng Shen(申人升), Yingmin Luo(骆英民), Guotong Du(杜国同) Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃ 2019 Chin. Phys. B 28 048502

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Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3

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Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃