Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

doi:10.1088/1674-1056/28/4/048503

Abstract

Ultraviolet (UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga₂O₃, TiO₂, and NiO, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.

Keywords: photodetector ultraviolet oxide semiconductor film

Received: 01 January 2019
Revised: 24 February 2019
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	61.80.Ba	(Ultraviolet, visible, and infrared radiation effects (including laser radiation))
	61.82.Fk	(Semiconductors)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61475153 and 61605200), the Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project, China (Grant No. 20180519023JH), the 100 Talents Program of the Chinese Academy of Sciences, and the Science Fund for Excellent Young Scholars of Jilin Province, China (Grant No. 20180520173JH).

Corresponding Authors: Xing Chen, Kewei Liu
E-mail: chenxing@ciomp.ac.cn;liukw@ciomp.ac.cn

Cite this article:

Changqi Zhou(周长祺), Qiu Ai(艾秋), Xing Chen(陈星), Xiaohong Gao(高晓红), Kewei Liu(刘可为), Dezhen Shen(申德振) Ultraviolet photodetectors based on wide bandgap oxide semiconductor films 2019 Chin. Phys. B 28 048503

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