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From microelectronics to spintronics and magnonics
Xiu-Feng Han(韩秀峰), Cai-Hua Wan(万蔡华), Hao Wu(吴昊), Chen-Yang Guo(郭晨阳), Ping Tang(唐萍), Zheng-Ren Yan(严政人), Yao-Wen Xing(邢耀文), Wen-Qing He(何文卿), and Guo-Qiang Yu(于国强)
Chin. Phys. B,
2022, 31 (11):
117504.
DOI: 10.1088/1674-1056/ac9048
In this review, the recent developments in microelectronics, spintronics, and magnonics have been summarized and compared. Firstly, the history of the spintronics has been briefly reviewed. Moreover, the recent development of magnonics such as magnon-mediated current drag effect (MCDE), magnon valve effect (MVE), magnon junction effect (MJE), magnon blocking effect (MBE), magnon-mediated nonlocal spin Hall magnetoresistance (MNSMR), magnon-transfer torque (MTT) effect, and magnon resonant tunneling (MRT) effect, magnon skin effect (MSE), etc., existing in magnon junctions or magnon heterojunctions, have been summarized and their potential applications in memory and logic devices, etc., are prospected, from which we can see a promising future for spintronics and magnonics beyond micro-electronics.
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