Spin and valley half metal induced by staggered potential and magnetization in silicene

doi:10.1088/1674-1056/23/1/017203

Abstract We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin–orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices.

Keywords: silicene spin–orbit interaction spin and valley half metal spin and valley blocking effect

Received: 08 May 2013
Revised: 05 August 2013
Accepted manuscript online:

PACS:	72.25.Dc	(Spin polarized transport in semiconductors)
	72.80.Vp	(Electronic transport in graphene)
	73.20.At	(Surface states, band structure, electron density of states)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11074032, 11074233, and 11274079) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20131284).

Corresponding Authors: Wang Jun
E-mail: jwang@seu.edu.cn

Cite this article:

Wang Sa-Ke (汪萨克), Tian Hong-Yu (田宏玉), Yang Yong-Hong (杨永宏), Wang Jun (汪军) Spin and valley half metal induced by staggered potential and magnetization in silicene 2014 Chin. Phys. B 23 017203

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Spin and valley half metal induced by staggered potential and magnetization in silicene

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