Generation of valley pump currents in silicene

doi:10.1088/1674-1056/28/1/017204

Abstract

We propose a workable scheme for generating a bulk valley pump current in a silicene-based device which consists of two pumping regions characterized by time-dependent strain and staggered potentials, respectively. In a one-dimension model, we show that a pure valley current can be generated, in which the two valley currents have the same magnitude but flow in opposite directions. Besides, the pumped valley current is quantized and maximized when the Fermi energy of the system locates in the bandgap opened by the two pumping potentials. Furthermore, the valley current can be finely controlled by tuning the device parameters. Our results are useful for the development of valleytronic devices based on two-dimensional materials.

Keywords: valley currents charge pump quantization silicene

Received: 02 September 2018
Revised: 21 November 2018
Accepted manuscript online:

PACS:	72.25.Dc	(Spin polarized transport in semiconductors)
	72.80.Vp	(Electronic transport in graphene)
	73.20.At	(Surface states, band structure, electron density of states)
	85.75.-d	(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 11274059, 11574045, and 11704165).

Corresponding Authors: Sa-Ke Wang
E-mail: IsaacWang@jit.edu.cn

Cite this article:

John Tombe Jada Marcellino, Mei-Juan Wang(王美娟), Sa-Ke Wang(汪萨克) Generation of valley pump currents in silicene 2019 Chin. Phys. B 28 017204

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Generation of valley pump currents in silicene

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