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    Acoustic radiation force and torque on a lossless eccentric layered fluid cylinder
    F G Mitri
    Chin. Phys. B, 2020, 29 (11): 114302.   DOI: 10.1088/1674-1056/aba27a
    Abstract96)      PDF (3021KB)(700)      

    Exact analytical equations and computations for the longitudinal and transverse acoustic radiation force and axial torque components for a lossless eccentric liquid cylinder submerged in a nonviscous fluid and insonified by plane waves progressive waves (of arbitrary incidence in the polar plane) are established and computed numerically. The modal matching method and the translational addition theorem in cylindrical coordinates are used to derive exact mathematical expressions applicable to any inner and outer cylinder sizes without any approximations, and taking into account the interaction effects between the waves propagating in the layer and those scattered from the cylindrical core. The results show that longitudinal and transverse radiation force components arise, in addition to the emergence of an axial radiation torque component acting on the non-absorptive compound cylinder due to geometrical asymmetry as the eccentricity increases. The computations demonstrate that the axial torque component, which arises due to a geometrical asymmetry, can be positive (causing counter-clockwise rotation in the polar plane), negative (clockwise rotation) or neutral (rotation cancellation) depending on the size parameter of the cylinder and the amount of eccentricity. Furthermore, verification and validation of the results have been accomplished from the standpoint of energy conservation law applied to scattering, and based on the reciprocity theorem.

    Topology and ferroelectricity in group-V monolayers
    Mutee Ur Rehman, Chenqiang Hua(华陈强), Yunhao Lu(陆赟豪)
    Chin. Phys. B, 2020, 29 (5): 057304.   DOI: 10.1088/1674-1056/ab81ff
    Abstract246)   HTML    PDF (5383KB)(458)      
    The group-V monolayers (MLs) have been studied intensively after the experimental fabrication of two-dimensional (2D) graphene and black phosphorus. The observation of novel quantum phenomena, such as quantum spin Hall effect and ferroelectricity in group-V elemental layers, has attracted tremendous attention because of the novel physics and promising applications for nanoelectronics in the 2D limit. In this review, we comprehensively review recent research progress in engineering of topology and ferroelectricity, and several effective methods to control the quantum phase transition are discussed. We then introduce the coupling between topological orders and ferroelectric orders. The research directions and outlooks are discussed at the end of the perspective. It is expected that the comprehensive overview of topology and ferroelectricity in 2D group-V materials can provide guidelines for researchers in the area and inspire further explorations of interplay between multiple quantum phenomena in low-dimensional systems.
    Designing solar-cell absorber materials through computational high-throughput screening
    Xiaowei Jiang(江小蔚), Wan-Jian Yin(尹万健)
    Chin. Phys. B, 2020, 29 (2): 028803.   DOI: 10.1088/1674-1056/ab6655
    Abstract272)   HTML    PDF (4510KB)(429)      
    Although the efficiency of CH3NH3PbI3 has been refreshed to 25.2%, stability and toxicity remain the main challenges for its applications. The search for novel solar-cell absorbers that are highly stable, non-toxic, inexpensive, and highly efficient is now a viable research focus. In this review, we summarize our recent research into the high-throughput screening and materials design of solar-cell absorbers, including single perovskites, double perovskites, and materials beyond perovskites. BaZrS3 (single perovskite), Ba2BiNbS6 (double perovskite), HgAl2Se4 (spinel), and IrSb3 (skutterudite) were discovered to be potential candidates in terms of their high stabilities, appropriate bandgaps, small carrier effective masses, and strong optical absorption.
    Fast achievement of quantum state transfer and distributed quantum entanglement by dressed states
    Liang Tian(田亮), Li-Li Sun(孙立莉), Xiao-Yu Zhu(朱小瑜), Xue-Ke Song(宋学科), Lei-Lei Yan(闫磊磊), Er-Jun Liang(梁二军), Shi-Lei Su(苏石磊), Mang Feng(冯芒)
    Chin. Phys. B, 2020, 29 (5): 050306.   DOI: 10.1088/1674-1056/ab7e9a
    Abstract203)   HTML    PDF (1939KB)(401)      
    We propose schemes to realize quantum state transfer and prepare quantum entanglement in coupled cavity and cavity-fiber-cavity systems, respectively, by using the dressed state method. We first give the expression of pulses shape by using dressed states and then find a group of Gaussian pulses that are easy to realize in experiment to replace the ideal pulses by curve fitting. We also study the influence of some parameters fluctuation, atomic spontaneous emission, and photon leakage on fidelity. The results show that our schemes have good robustness. Because the atoms are trapped in different cavities, it is easy to perform different operations on different atoms. The proposed schemes have the potential applications in dressed states for distributed quantum information processing tasks.
    In-memory computing to break the memory wall
    Xiaohe Huang(黄晓合), Chunsen Liu(刘春森), Yu-Gang Jiang(姜育刚), Peng Zhou(周鹏)
    Chin. Phys. B, 2020, 29 (7): 078504.   DOI: 10.1088/1674-1056/ab90e7
    Abstract227)   HTML    PDF (3505KB)(393)      
    Facing the computing demands of Internet of things (IoT) and artificial intelligence (AI), the cost induced by moving the data between the central processing unit (CPU) and memory is the key problem and a chip featured with flexible structural unit, ultra-low power consumption, and huge parallelism will be needed. In-memory computing, a non-von Neumann architecture fusing memory units and computing units, can eliminate the data transfer time and energy consumption while performing massive parallel computations. Prototype in-memory computing schemes modified from different memory technologies have shown orders of magnitude improvement in computing efficiency, making it be regarded as the ultimate computing paradigm. Here we review the state-of-the-art memory device technologies potential for in-memory computing, summarize their versatile applications in neural network, stochastic generation, and hybrid precision digital computing, with promising solutions for unprecedented computing tasks, and also discuss the challenges of stability and integration for general in-memory computing.
    Electron beam irradiation on novel coronavirus (COVID-19): A Monte-Carlo simulation
    Guobao Feng(封国宝), Lu Liu(刘璐), Wanzhao Cui(崔万照), Fang Wang(王芳)
    Chin. Phys. B, 2020, 29 (4): 048703.   DOI: 10.1088/1674-1056/ab7dac
    Abstract215)   HTML    PDF (5321KB)(390)      
    The novel coronavirus pneumonia triggered by COVID-19 is now raging the whole world. As a rapid and reliable killing COVID-19 method in industry, electron beam irradiation can interact with virus molecules and destroy their activity. With the unexpected appearance and quickly spreading of the virus, it is urgently necessary to figure out the mechanism of electron beam irradiation on COVID-19. In this study, we establish a virus structure and molecule model based on the detected gene sequence of Wuhan patient, and calculate irradiated electron interaction with virus atoms via a Monte Carlo simulation that track each elastic and inelastic collision of all electrons. The characteristics of irradiation damage on COVID-19, atoms' ionizations and electron energy losses are calculated and analyzed with regions. We simulate the different situations of incident electron energy for evaluating the influence of incident energy on virus damage. It is found that under the major protecting of an envelope protein layer, the inner RNA suffers the minimal damage. The damage for a ~100-nm-diameter virus molecule is not always enhanced by irradiation energy monotonicity, for COVID-19, the irradiation electron energy of the strongest energy loss damage is 2 keV.
    High-performance synaptic transistors for neuromorphic computing
    Hai Zhong(钟海), Qin-Chao Sun(孙勤超), Guo Li(李果), Jian-Yu Du(杜剑宇), He-Yi Huang(黄河意), Er-Jia Guo(郭尔佳), Meng He(何萌), Can Wang(王灿), Guo-Zhen Yang(杨国桢), Chen Ge(葛琛), Kui-Juan Jin(金奎娟)
    Chin. Phys. B, 2020, 29 (4): 040703.   DOI: 10.1088/1674-1056/ab7806
    Abstract359)   HTML    PDF (7578KB)(387)      
    The further development of traditional von Neumann-architecture computers is limited by the breaking of Moore's law and the von Neumann bottleneck, which make them unsuitable for future high-performance artificial intelligence (AI) systems. Therefore, new computing paradigms are desperately needed. Inspired by the human brain, neuromorphic computing is proposed to realize AI while reducing power consumption. As one of the basic hardware units for neuromorphic computing, artificial synapses have recently aroused worldwide research interests. Among various electronic devices that mimic biological synapses, synaptic transistors show promising properties, such as the ability to perform signal transmission and learning simultaneously, allowing dynamic spatiotemporal information processing applications. In this article, we provide a review of recent advances in electrolyte- and ferroelectric-gated synaptic transistors. Their structures, materials, working mechanisms, advantages, and disadvantages will be presented. In addition, the challenges of developing advanced synaptic transistors are discussed.
    Specific heat in superconductors
    Hai-Hu Wen(闻海虎)
    Chin. Phys. B, 2020, 29 (1): 017401.   DOI: 10.1088/1674-1056/ab5a3d
    Abstract260)   HTML    PDF (6693KB)(371)      
    Specific heat is a powerful tool to investigate the physical properties of condensed materials. Superconducting state is achieved through the condensation of paired electrons, namely, the Cooper pairs. The condensed Cooper pairs have lower entropy compared with that of electrons in normal metal, thus specific heat is very useful in detecting the low lying quasiparticle excitations of the superconducting condensate and the pairing symmetry of the superconducting gap. In this brief overview, we will give an introduction to the specific heat investigation of the physical properties of superconductors. We show the data obtained in cuprate and iron based superconductors to reveal the pairing symmetry of the order parameter.
    Perpendicular magnetization switching by large spin—orbit torques from sputtered Bi2Te3
    Zhenyi Zheng(郑臻益), Yue Zhang(张悦), Daoqian Zhu(朱道乾), Kun Zhang(张昆), Xueqiang Feng(冯学强), Yu He(何宇), Lei Chen(陈磊), Zhizhong Zhang(张志仲), Dijun Liu(刘迪军), Youguang Zhang(张有光), Pedram Khalili Amiri, Weisheng Zhao(赵巍胜)
    Chin. Phys. B, 2020, 29 (7): 078505.   DOI: 10.1088/1674-1056/ab9439
    Abstract206)   HTML    PDF (1025KB)(359)      
    Spin-orbit torque (SOT) effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices. Recently, topological insulators (TIs) have gained extensive attention, as they are demonstrated to maintain a large effective spin Hall angle (θSHeff), even at room temperature. However, molecular beam epitaxy (MBE), as a precise deposition method, is required to guarantee favorable surface states of TIs, which hinders the prospect of TIs towards industrial application. In this paper, we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy. By harmonic Hall measurement, a high SOT efficiency (8.7±0.9 Oe/(109 A/m2)) and a large θSHeff (3.3±0.3) are obtained at room temperature. Besides, we also observe an ultra-low critical switching current density (9.7×109 A/m2). Moreover, the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources. Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.
    Design and management of lithium-ion batteries: A perspective from modeling, simulation, and optimization
    Qian-Kun Wang(王乾坤), Jia-Ni Shen(沈佳妮), Yi-Jun He(贺益君), Zi-Feng Ma(马紫峰)
    Chin. Phys. B, 2020, 29 (6): 068201.   DOI: 10.1088/1674-1056/ab90f8
    Abstract285)   HTML    PDF (625KB)(356)      

    Although the lithium-ion batteries (LIBs) have been increasingly applied in consumer electronics, electric vehicles, and smart grid, they still face great challenges from the continuously improving requirements of energy density, power density, service life, and safety. To solve these issues, various studies have been conducted surrounding the battery design and management methods in recent decades. In the hope of providing some inspirations to the research in this field, the state of the art of design and management methods for LIBs are reviewed here from the perspective of process systems engineering. First, different types of battery models are summarized extensively, including electrical model and multi-physics coupled model, and the parameter identification methods are introduced correspondingly. Next, the model based battery design methods are reviewed briefly on three different scales, namely, electrode scale, cell scale, and pack scale. Then, the battery model based battery management methods, especially the state estimation methods with different model types are thoroughly compared. The key science and technology challenges for the development of battery systems engineering are clarified finally.

    Review on non-dipole effects in ionization and harmonic generation of atoms and molecules
    Mu-Xue Wang(王慕雪), Si-Ge Chen(陈思格), Hao Liang(梁昊), Liang-You Peng(彭良友)
    Chin. Phys. B, 2020, 29 (1): 013302.   DOI: 10.1088/1674-1056/ab5c10
    Abstract179)   HTML    PDF (2540KB)(352)      
    In this review, we will focus on recent progress on the investigations of nondipole effects in few-electron atoms and molecules interacting with light fields. We first briefly survey several popular theoretical methods and relevant concepts in strong field and attosecond physics beyond the dipole approximation. Physical phenomena stemming from the breakdown of the dipole approximation are then discussed in various topics, including the radiation pressure and photon-momentum transfer, the atomic stabilization, the dynamic interference, and the high-order harmonic generation. Whenever available, the corresponding experimental observations of these nondipole effects are also introduced respectively in each topics.
    Review of resistive switching mechanisms for memristive neuromorphic devices
    Rui Yang(杨蕊)
    Chin. Phys. B, 2020, 29 (9): 097305.   DOI: 10.1088/1674-1056/aba9c7
    Abstract239)      PDF (5417KB)(350)      
    Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure, low power consumption, and rich switching dynamics resembling biological synapses and neurons in the last decades. Fruitful demonstrations have been achieved in memristive synapses neurons and neural networks in the last few years. Versatile dynamics are involved in the data processing and storage in biological neurons and synapses, which ask for carefully tuning the switching dynamics of the memristive emulators. Note that switching dynamics of the memristive devices are closely related to switching mechanisms. Herein, from the perspective of switching dynamics modulations, the mainstream switching mechanisms including redox reaction with ion migration and electronic effect have been systemically reviewed. The approaches to tune the switching dynamics in the devices with different mechanisms have been described. Finally, some other mechanisms involved in neuromorphic computing are briefly introduced.
    Single crystal growth, structural and transport properties of bad metal RhSb2
    D S Wu(吴德胜), Y T Qian(钱玉婷), Z Y Liu(刘子懿), W Wu(吴伟), Y J Li(李延杰), S H Na(那世航), Y T Shao(邵钰婷), P Zheng(郑萍), G Li(李岗), J G Cheng(程金光), H M Weng(翁红明), J L Luo(雒建林)
    Chin. Phys. B, 2020, 29 (3): 037101.   DOI: 10.1088/1674-1056/ab696e
    Abstract347)   HTML    PDF (1974KB)(346)      
    We have successfully grown an arsenopyrite marcasite type RhSb2 single crystal, and systematically investigated its crystal structure, electrical transport, magnetic susceptibility, heat capacity, and thermodynamic properties. We found that the temperature-dependent resistivity exhibits a bad metal behavior with a board peak around 200 K. The magnetic susceptibility of RhSb2 shows diamagnetism from 300 K to 2 K. The low-temperature specific heat shows a metallic behavior with a quite small electronic specific-heat coefficient. No phase transition is observed in both specific heat and magnetic susceptibility data. The Hall resistivity measurements show that the conduction carriers are dominated by electrons with ne = 8.62×1018 cm-3 at 2 K, and the electron carrier density increases rapidly above 200 K without change sign. Combining with ab-initio band structure calculations, we showed that the unusual peak around 200 K in resistivity is related to the distinct electronic structure of RhSb2. In addition, a large thermopower S(T) about -140 μV/K is observed around 200 K, which might be useful for future thermoelectric applications.
    Giant topological Hall effect of ferromagnetic kagome metal Fe3Sn2
    Qi Wang(王琦), Qiangwei Yin(殷蔷薇), Hechang Lei(雷和畅)
    Chin. Phys. B, 2020, 29 (1): 017101.   DOI: 10.1088/1674-1056/ab5fbc
    Abstract253)   HTML    PDF (671KB)(344)      
    We present the experiment observation of a giant topological Hall effect (THE) in a frustrated kagome bilayer magnet Fe3Sn2. The negative topologically Hall resistivity appears when the field is below 1.3 T and it increases with increasing temperature up to 300 K. Its maximum absolute value reaches ~2.01 μΩ·cm at 300 K and 0.76 T. The origins of the observed giant THE can be attributed to the coexistence of the field-induced skyrmion state and the non-collinear spin configuration, possibly related to the magnetic frustration interaction in Fe3Sn2.
    Silicon-based optoelectronic synaptic devices
    Lei Yin(尹蕾), Xiaodong Pi(皮孝东), Deren Yang(杨德仁)
    Chin. Phys. B, 2020, 29 (7): 070703.   DOI: 10.1088/1674-1056/ab973f
    Abstract224)   HTML    PDF (6094KB)(341)      
    High-performance neuromorphic computing (i.e., brain-like computing) is envisioned to seriously demand optoelectronically integrated artificial neural networks (ANNs) in the future. Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs. For the large-scale deployment of high-performance neuromorphic computing in the future, it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon (Si) technologies. This calls for the development of Si-based optoelectronic synaptic devices. In this work we review the use of Si materials to make optoelectronic synaptic devices, which have either two-terminal or three-terminal structures. A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices. We also present the outlook of using Si materials for optoelectronic synaptic devices.
    Bohmian trajectory perspective on strong field atomic processes
    Xuan-Yang Lai(赖炫扬), Xiao-Jun Liu(柳晓军)
    Chin. Phys. B, 2020, 29 (1): 013205.   DOI: 10.1088/1674-1056/ab5c0f
    Abstract244)   HTML    PDF (1701KB)(305)      
    The interaction of an atom with an intense laser field provides an important approach to explore the ultrafast electron dynamics and extract the information of the atomic and molecular structures with unprecedented attosecond temporal and angstrom spatial resolution. To well understand the strong field atomic processes, numerous theoretical methods have been developed, including solving the time-dependent Schrödinger equation (TDSE), classical and semiclassical trajectory method, quantum S-matrix theory within the strong-field approximation, etc. Recently, an alternative and complementary quantum approach, called Bohmian trajectory theory, has been successfully used in the strong-field atomic physics and an exciting progress has been achieved in the study of strong-field phenomena. In this paper, we provide an overview of the Bohmian trajectory method and its perspective on two strong field atomic processes, i.e., atomic and molecular ionization and high-order harmonic generation, respectively.
    Topological Anderson insulator in two-dimensional non-Hermitian systems
    Hongfang Liu(刘宏芳), Zixian Su(苏子贤), Zhi-Qiang Zhang(张智强), Hua Jiang(江华)
    Chin. Phys. B, 2020, 29 (5): 050502.   DOI: 10.1088/1674-1056/ab8201
    Abstract250)   HTML    PDF (1891KB)(268)      
    We study the disorder-induced phase transition in two-dimensional non-Hermitian systems. First, the applicability of the noncommutative geometric method (NGM) in non-Hermitian systems is examined. By calculating the Chern number of two different systems (a square sample and a cylindrical one), the numerical results calculated by NGM are compared with the analytical one, and the phase boundary obtained by NGM is found to be in good agreement with the theoretical prediction. Then, we use NGM to investigate the evolution of the Chern number in non-Hermitian samples with the disorder effect. For the square sample, the stability of the non-Hermitian Chern insulator under disorder is confirmed. Significantly, we obtain a nontrivial topological phase induced by disorder. This phase is understood as the topological Anderson insulator in non-Hermitian systems. Finally, the disordered phase transition in the cylindrical sample is also investigated. The clean non-Hermitian cylindrical sample has three phases, and such samples show more phase transitions by varying the disorder strength: (1) the normal insulator phase to the gapless phase, (2) the normal insulator phase to the topological Anderson insulator phase, and (3) the gapless phase to the topological Anderson insulator phase.
    Computational screening of doping schemes forLiTi2(PO4)3 as cathode coating materials
    Yu-Qi Wang(王宇琦), Xiao-Rui Sun(孙晓瑞), Rui-Juan Xiao(肖睿娟), Li-Quan Chen(陈立泉)
    Chin. Phys. B, 2020, 29 (3): 038202.   DOI: 10.1088/1674-1056/ab7186
    Abstract196)   HTML    PDF (1030KB)(256)      
    In all-solid-state lithium batteries, the impedance at the cathode/electrolyte interface shows close relationship with the cycle performance. Cathode coatings are helpful to reduce the impedance and increase the stability at the interface effectively. LiTi2(PO4)3 (LTP), a fast ion conductor with high ionic conductivity approaching 10-3 S·cm-1, is adopted as the coating materials in this study. The crystal and electronic structures, as well as the Li+ ion migration properties are evaluated for LTP and its doped derivatives based on density functional theory (DFT) and bond valence (BV) method. Substituting part of Ti sites with element Mn, Fe, or Mg in LTP can improve the electronic conductivity of LTP while does not decrease its high ionic conductivity. In this way, the coating materials with both high ionic conductivities and electronic conductivities can be prepared for all-solid-state lithium batteries to improve the ion and electron transport properties at the interface.
    Electronic structure and spatial inhomogeneity of iron-based superconductor FeS
    Chengwei Wang(王成玮), Meixiao Wang(王美晓), Juan Jiang(姜娟), Haifeng Yang(杨海峰), Lexian Yang(杨乐仙), Wujun Shi(史武军), Xiaofang Lai(赖晓芳), Sung-Kwan Mo, Alexei Barinov, Binghai Yan(颜丙海), Zhi Liu(刘志), Fuqiang Huang(黄富强), Jinfeng Jia(贾金峰), Zhongkai Liu(柳仲楷), Yulin Chen(陈宇林)
    Chin. Phys. B, 2020, 29 (4): 047401.   DOI: 10.1088/1674-1056/ab75d4
    Abstract289)   HTML    PDF (2110KB)(251)      
    Iron-based superconductor family FeX (X =S, Se, Te) has been one of the research foci in physics and material science due to their record-breaking superconducting temperature (FeSe film) and rich physical phenomena. Recently, FeS, the least studied FeX compound (due to the difficulty in synthesizing high quality macroscopic crystals) attracted much attention because of its puzzling superconducting pairing symmetry. In this work, combining scanning tunneling microscopy and angle resolved photoemission spectroscopy (ARPES) with sub-micron spatial resolution, we investigate the intrinsic electronic structures of superconducting FeS from individual single crystalline domains. Unlike FeTe or FeSe, FeS remains identical tetragonal structure from room temperature down to 5 K, and the band structures observed can be well reproduced by our ab-initio calculations. Remarkably, mixed with the 1×1 tetragonal metallic phase, we also observe the coexistence of √5×√5 reconstructed insulating phase in the crystal, which not only helps explain the unusual properties of FeS, but also demonstrates the importance of using spatially resolved experimental tools in the study of this compound.
    Review on electrode-level fracture in lithium-ion batteries
    Bo Lu(吕浡), Chengqiang Ning(宁成强), Dingxin Shi(史定鑫), Yanfei Zhao(赵炎翡), Junqian Zhang(张俊乾)
    Chin. Phys. B, 2020, 29 (2): 026201.   DOI: 10.1088/1674-1056/ab6841
    Abstract151)   HTML    PDF (2841KB)(248)      
    Fracture occurred in electrodes of the lithium-ion battery compromises the integrity of the electrode structure and would exert bad influence on the cell performance and cell safety. Mechanisms of the electrode-level fracture and how this fracture would affect the electrochemical performance of the battery are of great importance for comprehending and preventing its occurrence. Fracture occurring at the electrode level is complex, since it may involve fractures in or between different components of the electrode. In this review, three typical types of electrode-level fractures are discussed: the fracture of the active layer, the interfacial delamination, and the fracture of metallic foils (including the current collector and the lithium metal electrode). The crack in the active layer can serve as an effective indicator of degradation of the electrochemical performance. Interfacial delamination usually follows the fracture of the active layer and is detrimental to the cell capacity. Fracture of the current collector impacts cell safety directly. Experimental methods and modeling results of these three types of fractures are concluded. Reasonable explanations on how these electrode-level fractures affect the electrochemical performance are sorted out. Challenges and unsettled issues of investigating these fracture problems are brought up. It is noted that the state-of-the-art studies included in this review mainly focus on experimental observations and theoretical modeling of the typical mechanical damages. However, quantitative investigations on the relationship between the electrochemical performance and the electrode-level fracture are insufficient. To further understand fractures in a multi-scale and multi-physical way, advancing development of the cross discipline between mechanics and electrochemistry is badly needed.
ISSN 1674-1056   CN 11-5639/O4

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