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    Radiation force and torque on a two-dimensional circular cross-section of a non-viscous eccentric layered compressible cylinder in acoustical standing waves
    F G Mitri
    Chin. Phys. B, 2021, 30 (2): 024302.   DOI: 10.1088/1674-1056/abbbd9
    Abstract26)      PDF (10103KB)(1040)      
    The purpose of this study is to develop an analytical formalism and derive series expansions for the time-averaged force and torque exerted on a compound coated compressible liquid-like cylinder, insonified by acoustic standing waves having an arbitrary angle of incidence in the polar (transverse) plane. The host medium of wave propagation and the eccentric liquid-like cylinder are non-viscous. Numerical computations illustrate the theoretical analysis with particular emphases on the eccentricity of the cylinder, the angle of incidence and the dimensionless size parameters of the inner and coating cylindrical fluid materials. The method to derive the acoustical scattering, and radiation force and torque components conjointly uses modal matching with the addition theorem, which adequately account for the multiple wave interaction effects between the layer and core fluid materials. The results demonstrate that longitudinal and lateral radiation force components arise. Moreover, an axial radiation torque component is quantified and computed for the non-absorptive compound cylinder, arising from geometrical asymmetry considerations as the eccentricity increases. The computational results reveal the emergence of neutral, positive, and negative radiation force and torque depending on the size parameter of the cylinder, the eccentricity, and the angle of incidence of the insonifying field. Moreover, based on the law of energy conservation applied to scattering, numerical verification is accomplished by computing the extinction/scattering energy efficiency. The results may find some related applications in fluid dynamics, particle trapping, mixing and manipulation using acoustical standing waves.
    Acoustic radiation force and torque on a lossless eccentric layered fluid cylinder
    F G Mitri
    Chin. Phys. B, 2020, 29 (11): 114302.   DOI: 10.1088/1674-1056/aba27a
    Abstract109)   HTML    PDF (3021KB)(711)      

    Exact analytical equations and computations for the longitudinal and transverse acoustic radiation force and axial torque components for a lossless eccentric liquid cylinder submerged in a nonviscous fluid and insonified by plane waves progressive waves (of arbitrary incidence in the polar plane) are established and computed numerically. The modal matching method and the translational addition theorem in cylindrical coordinates are used to derive exact mathematical expressions applicable to any inner and outer cylinder sizes without any approximations, and taking into account the interaction effects between the waves propagating in the layer and those scattered from the cylindrical core. The results show that longitudinal and transverse radiation force components arise, in addition to the emergence of an axial radiation torque component acting on the non-absorptive compound cylinder due to geometrical asymmetry as the eccentricity increases. The computations demonstrate that the axial torque component, which arises due to a geometrical asymmetry, can be positive (causing counter-clockwise rotation in the polar plane), negative (clockwise rotation) or neutral (rotation cancellation) depending on the size parameter of the cylinder and the amount of eccentricity. Furthermore, verification and validation of the results have been accomplished from the standpoint of energy conservation law applied to scattering, and based on the reciprocity theorem.

    High-resolution bone microstructure imaging based on ultrasonic frequency-domain full-waveform inversion
    Yifang Li(李义方), Qinzhen Shi(石勤振), Ying Li(李颖), Xiaojun Song(宋小军), Chengcheng Liu(刘成成), Dean Ta(他得安), and Weiqi Wang(王威琪)
    Chin. Phys. B, 2021, 30 (1): 014302.   DOI: 10.1088/1674-1056/abc7aa
    Abstract280)      PDF (9210KB)(684)      
    The main challenge in bone ultrasound imaging is the large acoustic impedance contrast and sound velocity differences between the bone and surrounding soft tissue. It is difficult for conventional pulse-echo modalities to give accurate ultrasound images for irregular bone boundaries and microstructures using uniform sound velocity assumption rather than getting a prior knowledge of sound speed. To overcome these limitations, this paper proposed a frequency-domain full-waveform inversion (FDFWI) algorithm for bone quantitative imaging utilizing ultrasonic computed tomography (USCT). The forward model was calculated in the frequency domain by solving the full-wave equation. The inverse problem was solved iteratively from low to high discrete frequency components via minimizing a cost function between the modeled and measured data. A quasi-Newton method called the limited-memory Broyden-Fletcher-Goldfarb-Shanno algorithm (L-BFGS) was utilized in the optimization process. Then, bone images were obtained based on the estimation of the velocity and density. The performance of the proposed method was verified by numerical examples, from tubular bone phantom to single distal fibula model, and finally with a distal tibia-fibula pair model. Compared with the high-resolution peripheral quantitative computed tomography (HR-pQCT), the proposed FDFWI can also clearly and accurately presented the wavelength scaled pores and trabeculae in bone images. The results proved that the FDFWI is capable of reconstructing high-resolution ultrasound bone images with sub-millimeter resolution. The parametric bone images may have the potential for the diagnosis of bone disease.
    Topology and ferroelectricity in group-V monolayers
    Mutee Ur Rehman, Chenqiang Hua(华陈强), Yunhao Lu(陆赟豪)
    Chin. Phys. B, 2020, 29 (5): 057304.   DOI: 10.1088/1674-1056/ab81ff
    Abstract278)   HTML    PDF (5383KB)(479)      
    The group-V monolayers (MLs) have been studied intensively after the experimental fabrication of two-dimensional (2D) graphene and black phosphorus. The observation of novel quantum phenomena, such as quantum spin Hall effect and ferroelectricity in group-V elemental layers, has attracted tremendous attention because of the novel physics and promising applications for nanoelectronics in the 2D limit. In this review, we comprehensively review recent research progress in engineering of topology and ferroelectricity, and several effective methods to control the quantum phase transition are discussed. We then introduce the coupling between topological orders and ferroelectric orders. The research directions and outlooks are discussed at the end of the perspective. It is expected that the comprehensive overview of topology and ferroelectricity in 2D group-V materials can provide guidelines for researchers in the area and inspire further explorations of interplay between multiple quantum phenomena in low-dimensional systems.
    Structural and electrical transport properties of Cu-doped Fe1 -xCuxSe single crystals
    He Li(李贺), Ming-Wei Ma(马明伟), Shao-Bo Liu(刘少博), Fang Zhou(周放), and Xiao-Li Dong(董晓莉)
    Chin. Phys. B, 2020, 29 (12): 127404.   DOI: 10.1088/1674-1056/abc3af
    Abstract382)      PDF (859KB)(466)      
    We report the structural and electrical transport properties of Fe1 -xCuxSe (x = 0, 0.02, 0.05, 0.10) single crystals grown by a chemical vapor transport method. Substituting Cu for Fe suppresses both the nematicity and superconductivity of FeSe single crystal, and provokes a metal-insulator transition. Our Hall measurements show that the Cu substitution also changes an electron dominance at low temperature of un-doped FeSe to a hole dominance of Cu-doped Fe1 -xCuxSe at x = 0.02 and 0.1, and reduces the sign-change temperature (TR) of the Hall coefficient (R H).
    In-memory computing to break the memory wall
    Xiaohe Huang(黄晓合), Chunsen Liu(刘春森), Yu-Gang Jiang(姜育刚), Peng Zhou(周鹏)
    Chin. Phys. B, 2020, 29 (7): 078504.   DOI: 10.1088/1674-1056/ab90e7
    Abstract301)   HTML    PDF (3505KB)(430)      
    Facing the computing demands of Internet of things (IoT) and artificial intelligence (AI), the cost induced by moving the data between the central processing unit (CPU) and memory is the key problem and a chip featured with flexible structural unit, ultra-low power consumption, and huge parallelism will be needed. In-memory computing, a non-von Neumann architecture fusing memory units and computing units, can eliminate the data transfer time and energy consumption while performing massive parallel computations. Prototype in-memory computing schemes modified from different memory technologies have shown orders of magnitude improvement in computing efficiency, making it be regarded as the ultimate computing paradigm. Here we review the state-of-the-art memory device technologies potential for in-memory computing, summarize their versatile applications in neural network, stochastic generation, and hybrid precision digital computing, with promising solutions for unprecedented computing tasks, and also discuss the challenges of stability and integration for general in-memory computing.
    Fast achievement of quantum state transfer and distributed quantum entanglement by dressed states
    Liang Tian(田亮), Li-Li Sun(孙立莉), Xiao-Yu Zhu(朱小瑜), Xue-Ke Song(宋学科), Lei-Lei Yan(闫磊磊), Er-Jun Liang(梁二军), Shi-Lei Su(苏石磊), Mang Feng(冯芒)
    Chin. Phys. B, 2020, 29 (5): 050306.   DOI: 10.1088/1674-1056/ab7e9a
    Abstract247)   HTML    PDF (1939KB)(411)      
    We propose schemes to realize quantum state transfer and prepare quantum entanglement in coupled cavity and cavity-fiber-cavity systems, respectively, by using the dressed state method. We first give the expression of pulses shape by using dressed states and then find a group of Gaussian pulses that are easy to realize in experiment to replace the ideal pulses by curve fitting. We also study the influence of some parameters fluctuation, atomic spontaneous emission, and photon leakage on fidelity. The results show that our schemes have good robustness. Because the atoms are trapped in different cavities, it is easy to perform different operations on different atoms. The proposed schemes have the potential applications in dressed states for distributed quantum information processing tasks.
    Electron beam irradiation on novel coronavirus (COVID-19): A Monte-Carlo simulation
    Guobao Feng(封国宝), Lu Liu(刘璐), Wanzhao Cui(崔万照), Fang Wang(王芳)
    Chin. Phys. B, 2020, 29 (4): 048703.   DOI: 10.1088/1674-1056/ab7dac
    Abstract243)   HTML    PDF (5321KB)(395)      
    The novel coronavirus pneumonia triggered by COVID-19 is now raging the whole world. As a rapid and reliable killing COVID-19 method in industry, electron beam irradiation can interact with virus molecules and destroy their activity. With the unexpected appearance and quickly spreading of the virus, it is urgently necessary to figure out the mechanism of electron beam irradiation on COVID-19. In this study, we establish a virus structure and molecule model based on the detected gene sequence of Wuhan patient, and calculate irradiated electron interaction with virus atoms via a Monte Carlo simulation that track each elastic and inelastic collision of all electrons. The characteristics of irradiation damage on COVID-19, atoms' ionizations and electron energy losses are calculated and analyzed with regions. We simulate the different situations of incident electron energy for evaluating the influence of incident energy on virus damage. It is found that under the major protecting of an envelope protein layer, the inner RNA suffers the minimal damage. The damage for a ~100-nm-diameter virus molecule is not always enhanced by irradiation energy monotonicity, for COVID-19, the irradiation electron energy of the strongest energy loss damage is 2 keV.
    High-performance synaptic transistors for neuromorphic computing
    Hai Zhong(钟海), Qin-Chao Sun(孙勤超), Guo Li(李果), Jian-Yu Du(杜剑宇), He-Yi Huang(黄河意), Er-Jia Guo(郭尔佳), Meng He(何萌), Can Wang(王灿), Guo-Zhen Yang(杨国桢), Chen Ge(葛琛), Kui-Juan Jin(金奎娟)
    Chin. Phys. B, 2020, 29 (4): 040703.   DOI: 10.1088/1674-1056/ab7806
    Abstract392)   HTML    PDF (7578KB)(395)      
    The further development of traditional von Neumann-architecture computers is limited by the breaking of Moore's law and the von Neumann bottleneck, which make them unsuitable for future high-performance artificial intelligence (AI) systems. Therefore, new computing paradigms are desperately needed. Inspired by the human brain, neuromorphic computing is proposed to realize AI while reducing power consumption. As one of the basic hardware units for neuromorphic computing, artificial synapses have recently aroused worldwide research interests. Among various electronic devices that mimic biological synapses, synaptic transistors show promising properties, such as the ability to perform signal transmission and learning simultaneously, allowing dynamic spatiotemporal information processing applications. In this article, we provide a review of recent advances in electrolyte- and ferroelectric-gated synaptic transistors. Their structures, materials, working mechanisms, advantages, and disadvantages will be presented. In addition, the challenges of developing advanced synaptic transistors are discussed.
    Collective modes of Weyl fermions with repulsive S-wave interaction
    Xun-Gao Wang(王勋高), Huan-Yu Wang(王寰宇), Jiang-Min Zhang(张江敏), and Wu-Ming Liu(刘伍明)
    Chin. Phys. B, 2020, 29 (11): 117201.   DOI: 10.1088/1674-1056/abbbdb
    Abstract313)   HTML    PDF (731KB)(386)      

    We calculate the spin and density susceptibility of Weyl fermions with repulsive S-wave interaction in ultracold gases. Weyl fermions have a linear dispersion, which is qualitatively different from the parabolic dispersion of conventional materials. We find that there are different collective modes for the different strengths of repulsive interaction by solving the poles equations of the susceptibility in the random-phase approximation. In the long-wavelength limit, the sound velocity and the energy gaps vary with the different strengths of the interaction in the zero sound mode and the gapped modes, respectively. The particle–hole continuum is obtained as well, where the imaginary part of the susceptibility is nonzero.

    Perpendicular magnetization switching by large spin—orbit torques from sputtered Bi2Te3
    Zhenyi Zheng(郑臻益), Yue Zhang(张悦), Daoqian Zhu(朱道乾), Kun Zhang(张昆), Xueqiang Feng(冯学强), Yu He(何宇), Lei Chen(陈磊), Zhizhong Zhang(张志仲), Dijun Liu(刘迪军), Youguang Zhang(张有光), Pedram Khalili Amiri, Weisheng Zhao(赵巍胜)
    Chin. Phys. B, 2020, 29 (7): 078505.   DOI: 10.1088/1674-1056/ab9439
    Abstract271)   HTML    PDF (1025KB)(385)      
    Spin-orbit torque (SOT) effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices. Recently, topological insulators (TIs) have gained extensive attention, as they are demonstrated to maintain a large effective spin Hall angle (θSHeff), even at room temperature. However, molecular beam epitaxy (MBE), as a precise deposition method, is required to guarantee favorable surface states of TIs, which hinders the prospect of TIs towards industrial application. In this paper, we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy. By harmonic Hall measurement, a high SOT efficiency (8.7±0.9 Oe/(109 A/m2)) and a large θSHeff (3.3±0.3) are obtained at room temperature. Besides, we also observe an ultra-low critical switching current density (9.7×109 A/m2). Moreover, the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources. Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.
    Review of resistive switching mechanisms for memristive neuromorphic devices
    Rui Yang(杨蕊)
    Chin. Phys. B, 2020, 29 (9): 097305.   DOI: 10.1088/1674-1056/aba9c7
    Abstract274)      PDF (5417KB)(368)      
    Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure, low power consumption, and rich switching dynamics resembling biological synapses and neurons in the last decades. Fruitful demonstrations have been achieved in memristive synapses neurons and neural networks in the last few years. Versatile dynamics are involved in the data processing and storage in biological neurons and synapses, which ask for carefully tuning the switching dynamics of the memristive emulators. Note that switching dynamics of the memristive devices are closely related to switching mechanisms. Herein, from the perspective of switching dynamics modulations, the mainstream switching mechanisms including redox reaction with ion migration and electronic effect have been systemically reviewed. The approaches to tune the switching dynamics in the devices with different mechanisms have been described. Finally, some other mechanisms involved in neuromorphic computing are briefly introduced.
    Design and management of lithium-ion batteries: A perspective from modeling, simulation, and optimization
    Qian-Kun Wang(王乾坤), Jia-Ni Shen(沈佳妮), Yi-Jun He(贺益君), Zi-Feng Ma(马紫峰)
    Chin. Phys. B, 2020, 29 (6): 068201.   DOI: 10.1088/1674-1056/ab90f8
    Abstract285)   HTML    PDF (625KB)(364)      

    Although the lithium-ion batteries (LIBs) have been increasingly applied in consumer electronics, electric vehicles, and smart grid, they still face great challenges from the continuously improving requirements of energy density, power density, service life, and safety. To solve these issues, various studies have been conducted surrounding the battery design and management methods in recent decades. In the hope of providing some inspirations to the research in this field, the state of the art of design and management methods for LIBs are reviewed here from the perspective of process systems engineering. First, different types of battery models are summarized extensively, including electrical model and multi-physics coupled model, and the parameter identification methods are introduced correspondingly. Next, the model based battery design methods are reviewed briefly on three different scales, namely, electrode scale, cell scale, and pack scale. Then, the battery model based battery management methods, especially the state estimation methods with different model types are thoroughly compared. The key science and technology challenges for the development of battery systems engineering are clarified finally.

    Silicon-based optoelectronic synaptic devices
    Lei Yin(尹蕾), Xiaodong Pi(皮孝东), Deren Yang(杨德仁)
    Chin. Phys. B, 2020, 29 (7): 070703.   DOI: 10.1088/1674-1056/ab973f
    Abstract257)   HTML    PDF (6094KB)(351)      
    High-performance neuromorphic computing (i.e., brain-like computing) is envisioned to seriously demand optoelectronically integrated artificial neural networks (ANNs) in the future. Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs. For the large-scale deployment of high-performance neuromorphic computing in the future, it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon (Si) technologies. This calls for the development of Si-based optoelectronic synaptic devices. In this work we review the use of Si materials to make optoelectronic synaptic devices, which have either two-terminal or three-terminal structures. A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices. We also present the outlook of using Si materials for optoelectronic synaptic devices.
    Peierls-phase-induced topological semimetals in an optical lattice: Moving of Dirac points, anisotropy of Dirac cones, and hidden symmetry protection
    Jing-Min Hou(侯净敏)
    Chin. Phys. B, 2020, 29 (12): 120305.   DOI: 10.1088/1674-1056/abc0de
    Abstract182)      PDF (1439KB)(325)      
    We propose a square optical lattice in which some of neighbor hoppings have a Peierls phase. The Peierls phase makes the lattice have a special band structure and induces the existence of Dirac points in the Brillouin zone, which means that topological semimetals exist in the system. The Dirac points move with the change of the Peierls phase and the Dirac cones are anisotropic for some vales of the Peierls phase. The lattice has a novel hidden symmetry, which is a composite antiunitary symmetry composed of a translation operation, a sublattice exchange, a complex conjugation, and a local U(1) gauge transformation. We prove that the Dirac points are protected by the hidden symmetry and perfectly explain the moving of Dirac points with the change of the Peierls phase based on the hidden symmetry protection.
    Topological Anderson insulator in two-dimensional non-Hermitian systems
    Hongfang Liu(刘宏芳), Zixian Su(苏子贤), Zhi-Qiang Zhang(张智强), Hua Jiang(江华)
    Chin. Phys. B, 2020, 29 (5): 050502.   DOI: 10.1088/1674-1056/ab8201
    Abstract298)   HTML    PDF (1891KB)(279)      
    We study the disorder-induced phase transition in two-dimensional non-Hermitian systems. First, the applicability of the noncommutative geometric method (NGM) in non-Hermitian systems is examined. By calculating the Chern number of two different systems (a square sample and a cylindrical one), the numerical results calculated by NGM are compared with the analytical one, and the phase boundary obtained by NGM is found to be in good agreement with the theoretical prediction. Then, we use NGM to investigate the evolution of the Chern number in non-Hermitian samples with the disorder effect. For the square sample, the stability of the non-Hermitian Chern insulator under disorder is confirmed. Significantly, we obtain a nontrivial topological phase induced by disorder. This phase is understood as the topological Anderson insulator in non-Hermitian systems. Finally, the disordered phase transition in the cylindrical sample is also investigated. The clean non-Hermitian cylindrical sample has three phases, and such samples show more phase transitions by varying the disorder strength: (1) the normal insulator phase to the gapless phase, (2) the normal insulator phase to the topological Anderson insulator phase, and (3) the gapless phase to the topological Anderson insulator phase.
    Electronic structure and spatial inhomogeneity of iron-based superconductor FeS
    Chengwei Wang(王成玮), Meixiao Wang(王美晓), Juan Jiang(姜娟), Haifeng Yang(杨海峰), Lexian Yang(杨乐仙), Wujun Shi(史武军), Xiaofang Lai(赖晓芳), Sung-Kwan Mo, Alexei Barinov, Binghai Yan(颜丙海), Zhi Liu(刘志), Fuqiang Huang(黄富强), Jinfeng Jia(贾金峰), Zhongkai Liu(柳仲楷), Yulin Chen(陈宇林)
    Chin. Phys. B, 2020, 29 (4): 047401.   DOI: 10.1088/1674-1056/ab75d4
    Abstract359)   HTML    PDF (2110KB)(268)      
    Iron-based superconductor family FeX (X =S, Se, Te) has been one of the research foci in physics and material science due to their record-breaking superconducting temperature (FeSe film) and rich physical phenomena. Recently, FeS, the least studied FeX compound (due to the difficulty in synthesizing high quality macroscopic crystals) attracted much attention because of its puzzling superconducting pairing symmetry. In this work, combining scanning tunneling microscopy and angle resolved photoemission spectroscopy (ARPES) with sub-micron spatial resolution, we investigate the intrinsic electronic structures of superconducting FeS from individual single crystalline domains. Unlike FeTe or FeSe, FeS remains identical tetragonal structure from room temperature down to 5 K, and the band structures observed can be well reproduced by our ab-initio calculations. Remarkably, mixed with the 1×1 tetragonal metallic phase, we also observe the coexistence of √5×√5 reconstructed insulating phase in the crystal, which not only helps explain the unusual properties of FeS, but also demonstrates the importance of using spatially resolved experimental tools in the study of this compound.
    Evidence for bosonic mode coupling in electron dynamics of LiFeAs superconductor
    Cong Li(李聪), Guangyang Dai(代光阳), Yongqing Cai(蔡永青), Yang Wang(王阳), Xiancheng Wang(望贤成), Qiang Gao(高强), Guodong Liu(刘国东), Yuan Huang(黄元), Qingyan Wang(王庆艳), Fengfeng Zhang(张丰丰), Shenjin Zhang(张申金), Feng Yang(杨峰), Zhimin Wang(王志敏), Qinjun Peng(彭钦军), Zuyan Xu(许祖彦), Changqing Jin(靳常青), Lin Zhao(赵林)†, and X J Zhou(周兴江)‡
    Chin. Phys. B, 2020, 29 (10): 107402.   DOI: 10.1088/1674-1056/abb21f
    Abstract242)   HTML    PDF (1392KB)(267)      

    Super-high resolution laser-based angle-resolved photoemission measurements are carried out on LiFeAs superconductor to investigate its electron dynamics. Three energy scales at ∼ 20 meV, ∼ 34 meV, and ∼ 55 meV are revealed for the first time in the electron self-energy both in the superconducting state and normal state. The ∼ 20 meV and ∼ 34 meV scales can be attributed to the coupling of electrons with sharp bosonic modes which are most likely phonons. These observations provide definitive evidence on the existence of mode coupling in iron-based superconductors.

    Effects of water on the structure and transport properties of room temperature ionic liquids and concentrated electrolyte solutions
    Jinbing Zhang(张晋兵), Qiang Wang(王强), Zexian Cao(曹则贤)
    Chin. Phys. B, 2020, 29 (8): 087804.   DOI: 10.1088/1674-1056/ab9c07
    Abstract232)   HTML    PDF (2100KB)(264)      

    Transport properties and the associated structural heterogeneity of room temperature aqueous ionic liquids and especially of super-concentrated electrolyte aqueous solutions have received increasing attention, due to their potential application in ionic battery. This paper briefly reviews the results reported mainly since 2010 about the liquid-liquid separation, aggregation of polar and apolar domains in neat RTILs, and solvent clusters and 3D networks chiefly constructed by anions in super-concentrated electrolyte solutions. At the same time, the dominating effect of desolvation process of metal ions at electrode/electrolyte interface upon the transport of metal ions is stressed. This paper also presents the current understanding of how water affects the anion-cation interaction, structural heterogeneities, the structure of primary coordination sheath of metal ions and consequently their transport properties in free water-poor electrolytes.

    Optoelectronic memristor for neuromorphic computing
    Wuhong Xue(薛武红), Wenjuan Ci(次文娟), Xiao-Hong Xu(许小红), Gang Liu(刘钢)
    Chin. Phys. B, 2020, 29 (4): 048401.   DOI: 10.1088/1674-1056/ab75da
    Abstract223)   HTML    PDF (11511KB)(236)      
    With the need of the internet of things, big data, and artificial intelligence, creating new computing architecture is greatly desired for handling data-intensive tasks. Human brain can simultaneously process and store information, which would reduce the power consumption while improve the efficiency of computing. Therefore, the development of brain-like intelligent device and the construction of brain-like computation are important breakthroughs in the field of artificial intelligence. Memristor, as the fourth fundamental circuit element, is an ideal synaptic simulator due to its integration of storage and processing characteristics, and very similar activities and the working mechanism to synapses among neurons which are the most numerous components of the brains. In particular, memristive synaptic devices with optoelectronic responding capability have the benefits of storing and processing transmitted optical signals with wide bandwidth, ultrafast data operation speed, low power consumption, and low cross-talk, which is important for building efficient brain-like computing networks. Herein, we review recent progresses in optoelectronic memristor for neuromorphic computing, including the optoelectronic memristive materials, working principles, applications, as well as the current challenges and the future development of the optoelectronic memristor.
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