Spin and valley filter in strain engineered silicene

doi:10.1088/1674-1056/24/3/037202

Abstract The realization of a perfect spin or valley filtering effect in two-dimensional graphene-like materials is one of the fundamental objectives in spintronics and valleytronics. For this purpose, we study spin- and valley-dependent transport in a silicene system with spatially alternative strains. It is found that due to the valley-opposite gauge field induced by the strain, the strained silicene with a superlattice structure exhibits an angle-resolved valley and spin filtering effect when the spin-orbit interaction is considered. When the interaction that breaks the time reversal symmetry is introduced, such as the spin or valley dependent staggered magnetization, the system is shown to be a perfect spin and valley half metal in which only one spin and valley species is allowed to transport. Our findings are helpful to design both spintronic and valleytronic devices based on silicene.

Keywords: spin filtering effect valley filtering effect transmission valleytronics

Received: 01 September 2014
Revised: 01 November 2014
Accepted manuscript online:

PACS:	72.25.Dc	(Spin polarized transport in semiconductors)
	72.80.Vp	(Electronic transport in graphene)
	85.75.-d	(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Corresponding Authors: Wang Jun
E-mail: jwang@seu.edu.cn

Cite this article:

Wang Sa-Ke (汪萨克), Wang Jun (汪军) Spin and valley filter in strain engineered silicene 2015 Chin. Phys. B 24 037202

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Spin and valley filter in strain engineered silicene

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