Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2018, Vol. 27 Issue (8): 087303    DOI: 10.1088/1674-1056/27/8/087303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Optoelectronic properties of bottom gate-defined in-plane monolayer WSe2 p-n junction
Di Liu(刘頔)1,2, Xiao-Zhuo Qi(祁晓卓)1,2, Kuei-Lin Chiu(邱奎霖)1,2, Takashi Taniguchi3, Xi-Feng Ren(任希锋)1,2, Guo-Ping Guo(郭国平)1,2
1 Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei 230026, China;
2 Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
3 National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn