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MoS2/Si tunnel diodes based on comprehensive transfer technique |
| Yi Zhu(朱翊)1, Hongliang Lv(吕红亮)1,†, Yuming Zhang(张玉明)1, Ziji Jia(贾紫骥)1, Jiale Sun(孙佳乐)1, Zhijun Lyu(吕智军)2, and Bin Lu(芦宾)3 |
1 School of Microelectronics, Xidian University, The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
2 Department of Integrated Circuit Design, Institute of Microelectronics Technology, Xi'an 710071, China;
3 School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China |
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Abstract Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultaneously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.
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Received: 11 June 2022
Revised: 21 September 2022
Accepted manuscript online: 29 September 2022
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PACS:
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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73.40.Gk
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(Tunneling)
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81.05.Hd
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(Other semiconductors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61851405). |
Corresponding Authors:
Hongliang Lv
E-mail: hllv@mail.xidian.edu.cn
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Cite this article:
Yi Zhu(朱翊), Hongliang Lv(吕红亮), Yuming Zhang(张玉明), Ziji Jia(贾紫骥), Jiale Sun(孙佳乐), Zhijun Lyu(吕智军), and Bin Lu(芦宾) MoS2/Si tunnel diodes based on comprehensive transfer technique 2023 Chin. Phys. B 32 018501
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