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Chin. Phys. B, 2023, Vol. 32(1): 018501    DOI: 10.1088/1674-1056/ac9604

MoS2/Si tunnel diodes based on comprehensive transfer technique

Yi Zhu(朱翊)1, Hongliang Lv(吕红亮)1,†, Yuming Zhang(张玉明)1, Ziji Jia(贾紫骥)1, Jiale Sun(孙佳乐)1, Zhijun Lyu(吕智军)2, and Bin Lu(芦宾)3
1 School of Microelectronics, Xidian University, The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
2 Department of Integrated Circuit Design, Institute of Microelectronics Technology, Xi'an 710071, China;
3 School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China
Abstract  Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultaneously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.
Keywords:  2D/3D heterostructure      transfer technique      tunnel diode      MoS2/Si  
Received:  11 June 2022      Revised:  21 September 2022      Accepted manuscript online:  29 September 2022
PACS:  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  73.40.Gk (Tunneling)  
  81.05.Hd (Other semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61851405).
Corresponding Authors:  Hongliang Lv     E-mail:

Cite this article: 

Yi Zhu(朱翊), Hongliang Lv(吕红亮), Yuming Zhang(张玉明), Ziji Jia(贾紫骥), Jiale Sun(孙佳乐), Zhijun Lyu(吕智军), and Bin Lu(芦宾) MoS2/Si tunnel diodes based on comprehensive transfer technique 2023 Chin. Phys. B 32 018501

[1] Shin G H, Koo B, Park H, Woo Y, Lee J E and Choi S Y 2018 ACS Appl. Mater. Interfaces 10 40212
[2] Sarkar D, Xie X J, Liu W, Cao W, Kang J H, Gong Y J, Kraemer S, Ajayan P M and Banerjee K 2015 Nature 526 91
[3] Lan Y W, Torres C M, Tsai S H, Zhu X D, Shi Y M, Li M Y, Li L J, Yeh W K and Wang K L 2016 Small 12 5676
[4] Jia R D, Huang Q Q and Huang R 2020 Sci. China-Inf. Sci. 63 122401
[5] Lyu Z J, Lv H L, Zhang Y M, Zhang Y M, Zhu Y, Sun J L, Li M and Lu B 2021 IEEE Trans. Electron Devices 68 1313
[6] Lu B, Cui Y, Guo A X, Wang D W, Lv Z J, Zhou J R and Miao Y H 2021 IEEE Trans. Electron Devices 68 1537
[7] Aftab S, Samiya M, Liao W G, Iqbal M W, Ishfaq M, Ramachandraiah K, Ajmal H M S, Ul Haque H M, Yousuf S, Ahmed Z, Khan M U, Rehman A U and Iqbal M Z 2021 J. Mater. Chem. C 9 3998
[8] Zhang Y, Zhang Y F, Ji Q Q, Ju J, Yuan H T, Shi J P, Gao T, Ma D L, Liu M X, Chen Y B, Song X J, Hwang H Y, Cui Y and Liu Z F 2013 ACS Nano 7 8963
[9] Ji Q Q, Kan M, Zhang Y, Guo Y, Ma D L, Shi J P, Sun Q, Chen Q, Zhang Y F and Liu Z F 2015 Nano Lett. 15 198
[10] Liu K K, Zhang W J, Lee Y H, Lin Y C, Chang M T, Su C, Chang C S, Li H, Shi Y M, Zhang H, Lai C S and Li L J 2012 Nano Lett. 12 1538
[11] Zheng W, Lin J, Feng W, Xiao K, Qiu Y, Chen X S, Liu G, Cao W, Pantelides S T, Zhou W and Hu P A 2016 Adv. Funct. Mater. 26 6371
[12] Zhou W, Zou X, Najmaei S, Liu Z, Shi Y and Kong J 2013 Nano Lett. 13 2615
[13] Radisavljevic B, Radenovic A, Brivio J and Giacometti V Kis A 2011 Nat. Nanotechnol. 6 147
[14] Krishnamoorthy S, Lee E W, Lee C H, Zhang Y W, McCulloch W D, Johnson J M, Hwang J, Wu Y Y and Rajan S 2016 Appl. Phys. Lett. 109 183505
[15] Chow P K, Singh E, Viana B C, Gao J, Luo J, Li J, Lin Z, Elias A L, Shi Y F, Wang Z K, Terrones M and Koratkar N 2015 ACS Nano 9 3023
[16] Azimi G, Dhiman R, Kwon H M, Paxson A T and Varanasi K K 2013 Nat. Mater. 12 315
[17] Lin Y C, Zhang W J, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W and Li L J 2012 Nanoscale 4 6637
[18] Qi J L, Wang X, Lin J H, Zhang F, Feng J C and Fei W D 2015 Nanoscale 7 3675
[19] Dumcenco D, Ovchinnikov D, Marinov K, Lazic P, Gibertini M, Marzari N, Sanchez O L, Kung Y C, Krasnozhon D, Chen M W, Bertolazzi S, Gillet P, Morral A F I, Radenovic A and Kis A 2015 ACS Nano 9 4611
[20] Xu K, Cai Y H and Zhu W J 2018 IEEE Trans. Electron Devices 65 4155
[21] Molina-Sanchez A and Wirtz L 2011 Phys. Rev. B 84 155413
[22] Lee C, Yan H, Brus L E, Heinz T F, Hone J and Ryu S 2010 ACS Nano 4 2695
[23] Zhang L 2016 Tunneling field effect transistor technology (New York: Springer International Publishing) pp. 33-61
[24] Neamen D A 2003 Semiconductor physics and devices: basic principles (New York: McGraw-hill) pp. 166-167
[25] Wang X L, Kim S Y and Wallace R M 2021 ACS Appl. Mater. Interfaces 13 15802
[26] Liu Y, Guo J, Zhu E B, Liao L, Lee S J, Ding M N, Shakir I, Gambin V, Huang Y and Duan X F 2018 Nature 557 696
[27] Rai A, Valsaraj A, Movva H C P, Roy A, Ghosh R, Sonde S, Kang S W, Chang J W, Trivedi T, Dey R, Guchhait S, Larentis S, Register L F, Tutuc E and Banerjee S K 2015 Nano Lett. 15 4329
[28] Allain A, Kang J H, Banerjee K and Kis A 2015 Nat. Mater. 14 1195
[29] Schauble K, Zakhidov D, Yalon E, Deshmukh S, Grady R W, Cooley K A, McClellan C J, Vaziri S, Passarello D, Mohney S E, Toney M F, Sood A K, Salleo A and Pop E 2020 ACS Nano 14 14798
[30] Leong W S, Luo X, Li Y D, Khoo K H, Quek S Y and Thong J T L 2015 ACS Nano 9 869
[31] English C D, Shine G, Dorgan V E, Saraswat K C and Pop E 2016 Nano Lett. 16 3824
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