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CN 11-5639/O4
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Other articles related with "85.60.Dw":
48503 Wen-Juan Yu, Yu Zhang, Ming-Zhu Xu, Xin-Miao Lu
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    Chin. Phys. B   2020 Vol.29 (4): 48503-048503 [Abstract] (6) [HTML 1 KB] [PDF 629 KB] (2)
128502 Cheng-Yun Hong, Gang-Feng Huang, Wen-Wen Yao, Jia-Jun Deng, Xiao-Long Liu
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68502 Taha Haddadifam, Mohammad Azim Karami
  Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies
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38102 Jing Pan, Wei Deng, Xiuzhen Xu, Tianhao Jiang, Xiujuan Zhang, Jiansheng Jie
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20701 Jinming Hu, Yuansheng Shi, Zhenheng Zhang, Ruonan Zhi, Shengyi Yang, Bingsuo Zou
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18502 Ye Wang, Meng-Lei Gao, Jin-Liang Wu, Xing-Wang Zhang
  Metal halide perovskite photodetectors: Material featuresand device engineering
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128102 Yong-Gang Zhang, Yi Gu, Xiu-Mei Shao, Xue Li, Hai-Mei Gong, Jia-Xiong Fang
  Short-wave infrared InGaAs photodetectors and focal plane arrays
    Chin. Phys. B   2018 Vol.27 (12): 128102-128102 [Abstract] (140) [HTML 1 KB] [PDF 577 KB] (188)
128502 Siqi Hu, Ruijuan Tian, Xiaoguang Luo, Rui Yin, Yingchun Cheng, Jianlin Zhao, Xiaomu Wang, Xuetao Gan
  Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors
    Chin. Phys. B   2018 Vol.27 (12): 128502-128502 [Abstract] (228) [HTML 1 KB] [PDF 1749 KB] (133)
104207 Lin-Dong Ma, Yu-Dong Li, Lin Wen, Jie Feng, Xiang Zhang, Tian-Hui Wang, Yu-Long Cai, Zhi-Ming Wang, Qi Guo
  Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor
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87303 Di Liu, Xiao-Zhuo Qi, Kuei-Lin Chiu, Takashi Taniguchi, Xi-Feng Ren, Guo-Ping Guo
  Optoelectronic properties of bottom gate-defined in-plane monolayer WSe2 p-n junction
    Chin. Phys. B   2018 Vol.27 (8): 87303-087303 [Abstract] (137) [HTML 1 KB] [PDF 2359 KB] (140)
48501 Ya-Jie Feng, Chong Li, Qiao-Li Liu, Hua-Qiang Wang, An-Qi Hu, Xiao-Ying He, Xia Guo
  Scalability of dark current in silicon PIN photodiode
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114212 Lindong Ma, Yudong Li, Qi Guo, Lin Wen, Dong Zhou, Jie Feng, Yuan Liu, Junzhe Zeng, Xiang Zhang, Tianhui Wang
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    Chin. Phys. B   2017 Vol.26 (11): 114212-114212 [Abstract] (135) [HTML 1 KB] [PDF 643 KB] (217)
38503 Yin Tang, Qing Cai, Lian-Hong Yang, Ke-Xiu Dong, Dun-Jun Chen, Hai Lu, Rong Zhang, You-Dou Zheng
  An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization
    Chin. Phys. B   2017 Vol.26 (3): 38503-038503 [Abstract] (176) [HTML 1 KB] [PDF 285 KB] (207)
38504 Xia Wei, Fa-Guang Yan, Chao Shen, Quan-Shan Lv, Kai-You Wang
  Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
    Chin. Phys. B   2017 Vol.26 (3): 38504-038504 [Abstract] (311) [HTML 1 KB] [PDF 7098 KB] (624)
28101 Yu-Bing Wang, Wei-Hong Yin, Qin Han, Xiao-Hong Yang, Han Ye, Qian-Qian Lv, Dong-Dong Yin
  Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates
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118103 Yubing Wang, Weihong Yin, Qin Han, Xiaohong Yang, Han Ye, Qianqian Lv, Dongdong Yin
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68101 Yin Wei-Hong, Wang Yu-Bing, Han Qin, Yang Xiao-Hong
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48504 Jiang Zhi-Yun, Xie Hong-Yun, Zhang Liang-Hao, Zhang Wan-Rong, Hu Rui-Xin, Huo Wen-Juan
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57504 A. Tataroğlu, A. A. Hendi, R. H. Alorainy, F. Yakuphanoğlu
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108503 Liu Shao-Qing, Yang Xiao-Hong, Liu Yu, Li Bin, Han Qin
  Design and fabrication of a high-performance evanescently coupled waveguide photodetector
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108504 Qiao Yun, Liang Kun, Chen Wen-Fei, Han De-Jun
  Preliminary results for the design, fabrication, and performance of a backside-illuminated avalanche drift detector
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37301 Pu Hong-Bin, He Xin, Quan Ru-Dai, Cao Lin, Chen Zhi-Ming
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88503 Liu Yu-Rong, Lai Pei-Tao, Yao Ruo-He
  High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)
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57304 Pu Hong-Bin, Cao Lin, Chen Zhi-Ming, Ren Jie
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28502 Zhou Peng, Li Chun-Fei, Liao Chang-Jun, Wei Zheng-Jun, Yuan Shu-Qiong
  Numerical analysis of In0.53Ga0.47As/InP single photon avalanche diodes
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18504 Zuo Yu-Hua, Cao Quan, Zhang Yun, Zhang Ling-Zi, Guo Jian-Chuan, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming
  InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm
    Chin. Phys. B   2011 Vol.20 (1): 18504-018504 [Abstract] (1268) [HTML 0 KB] [PDF 1079 KB] (826)
117105 Hao Guo-Dong, Chen Yong-Hai, Fan Ya-Ming, Huang Xiao-Hui, Wang Huai-Bing
  22) plane GaN films[J]. Chinese Physics B, 2010,19(11): 117105-117106')"/> Strain effects on optical polarisation properties in (1122) plane GaN films
    Chin. Phys. B   2010 Vol.19 (11): 117105-117106 [Abstract] (1026) [HTML 0 KB] [PDF 986 KB] (528)
80308 Liu Yun, Wu Qing-Lin, Han Zheng-Fu, Dai Yi-Min, Guo Guang-Can
  Internal cancellation of spikes using two avalanche photodiodes in series for single photon detection
    Chin. Phys. B   2010 Vol.19 (8): 80308-080308 [Abstract] (1243) [HTML 0 KB] [PDF 378 KB] (743)
74216 Zhang Yun-Xiao, Liao Zai-Yi, Zhao Ling-Juan, Pan Jiao-Qing, Zhu Hong-Liang, Wang Wei
  Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators
    Chin. Phys. B   2010 Vol.19 (7): 74216-074216 [Abstract] (870) [HTML 0 KB] [PDF 794 KB] (697)
2393 Zhang Yun-Xiao, Liao Zai-Yi, Wang Wei
  High-performance evanescently-coupled uni-traveling-carrier photodiodes
    Chin. Phys. B   2009 Vol.18 (6): 2393-2397 [Abstract] (1347) [HTML 0 KB] [PDF 460 KB] (617)
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