High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors

doi:10.1088/1674-1056/ab7e96

Abstract This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor (CMOS)-like inverters. Pentacene is employed as a p-type organic semiconductor for its stable electrical performance, while the solution-processed scandium (Sc) substituted indium oxide (ScInO) is employed as an n-type inorganic semiconductor. It is observed that by regulating the doping concentration of Sc, the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor, which is vital for achieving high-performance inverters. When the doping concentration of Sc is 10 at.%, the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin (53% of the theoretical value). The inverters also respond well to the input signal with frequency up to 500 Hz.

Keywords: solution-processed ScInO ambipolar transistor inverter

Received: 27 December 2019
Revised: 20 February 2020
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	61.82.Fk	(Semiconductors)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574003 and 61774010) and Shenzhen Municipal Scientific Program, China (Grant Nos. GGFW20170728163447038 and JCYJ20180504165449640).

Corresponding Authors: Shengdong Zhang
E-mail: zhangsd@pku.edu.cn

Cite this article:

Sheng Sun(孙圣), Yuzhi Li(李育智), Shengdong Zhang(张盛东) High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors 2020 Chin. Phys. B 29 058503

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High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors

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