Please wait a minute...
Chin. Phys. B, 2023, Vol. 32(4): 047701    DOI: 10.1088/1674-1056/aca39e
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Domain size and charge defects affecting the polarization switching of antiferroelectric domains

Jinghao Zhu(朱静浩)1, Zhen Liu(刘震)2,†, Boyi Zhong(钟柏仪)3, Yaojin Wang(汪尧进)2,‡, and Baixiang Xu(胥柏香)3,§
1 Nanjing Research Institute of Electronics Technology, Nanjing 210039, China;
2 School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
3 Mechanics of Functional Materials, Department of Materials Science, Technical University of Darmstadt, Darmstadt 64287, Germany
Abstract  The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood. In this work, by using the phase field simulation, we have studied the polarization switching property of antiferroelectric domains. Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains, and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops. Moreover, we introduce charge defects into the sample and numerically investigate their influence. It is also shown that charge defects can induce local ferroelectric domains, which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop. Our results give insights into understanding the antiferroelectric phase transformation and optimizing the energy storage property in experiments.
Keywords:  antiferroelectric domains      phase field simulation      domain size      charge defects  
Received:  18 July 2022      Revised:  14 November 2022      Accepted manuscript online:  17 November 2022
PACS:  77.80.bj (Scaling effects)  
  77.80.Dj (Domain structure; hysteresis)  
  77.84.Lf (Composite materials)  
Fund: Project supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20190405) and the LOEWE program of the State of Hesse, Germany, within the project FLAME (Fermi Level Engineering of Antiferroelectric Materials for Energy Storage and Insulation Systems).
Corresponding Authors:  Zhen Liu, Yaojin Wang, Baixiang Xu     E-mail:  liuz_hit@njust.edu.cn;yjwang@njust.edu.cn;xu@mfm.tu-darmstadt.de

Cite this article: 

Jinghao Zhu(朱静浩), Zhen Liu(刘震), Boyi Zhong(钟柏仪), Yaojin Wang(汪尧进), and Baixiang Xu(胥柏香) Domain size and charge defects affecting the polarization switching of antiferroelectric domains 2023 Chin. Phys. B 32 047701

[1] Xu Z, Dai X and Viehland D 1995 Phys. Rev. B 51 6261
[2] Tan X, Ma C, Frederick J, Beckman S and Webber K G 2011 J. Am. Ceram. Soc. 94 4091
[3] Zhuo F, Li Q, Zhou Y, Ji Y, Yan Q, Zhang Y, Xi X, Chu X and Cao W 2018 Acta Mater. 148 28
[4] Wang H, Liu Y, Yang T and Zhang S 2019 Adv. Func. Mater. 29 1807321
[5] Qi H, Zuo R, Xie A, Tian A, Fu J, Zhang Y and Zhang S 2019 Adv. Func. Mater. 29 1903877
[6] Patel S, Chauhan A and Vaish R 2014 Mater. Res. Express 1 045502
[7] Jona F, Shirane G, Mazzi F and Pepinsky R 1957 Phys. Rev. 105 849
[8] Shirane G and Pepinsky R 1953 Phys. Rev. 91 812
[9] Blue C, Hicks J, Park S E, Yoshikawa S and Cross L 1996 Appl. Phys. Lett. 68 2942
[10] He H and Tan X 2005 Phys. Rev. B 72 024102
[11] Asada T and Koyama Y 2004 Phys. Rev. B 69 104108
[12] Guo H, Shimizu H and Randall C A 2015 Appl. Phys. Lett. 107 112904
[13] Qiao L, Song C, Sun Y, Fayaz M U, Lu T, Yin S, Chen C, Xu H, Ren T and Pan P 2021 Nat. Commun. 12 4215
[14] Qiao L, Song C, Wang Q, Zhou Y and Pan F 2022 ACS Appl. Nano Mater. 5 6083
[15] Fan Z, Ma T, Wei J, Yang T, Zhou L and Tan X 2020 J. Mater. Sci. 55 4953
[16] Ma T, Fan Z, Tan X and Zhou L 2019 Appl. Phys. Lett. 115 122902
[17] Ma T, Fan Z, Xu B, Kim T H, Lu P, Bellaiche L, Kramer M J, Tan X and Zhou L 2019 Phys. Rev. Lett. 123 217602
[18] Fu Z, Chen X, Li Z, Hu T, Zhang L, Lu P, Zhang S, Wang G, Dong X and Xu F 2020 Nat. Commun. 11 3809
[19] Liu Z and Xu B X 2020 Scripta Mater. 186 136
[20] Wei X K, Tagantsev A K, Kvasov A, Roleder K, Jia C L and Setter N 2014 Nat. Commun. 5 3031
[21] Kholkin A, Shvartsman V, Kiselev D and Bdikin I 2006 Ferroelectrics 341 3
[22] Bdikin I, Shvartsman V and Kholkin A 2003 Appl. Phys. Lett. 83 4232
[23] Paruch P, Giamarchi T, Tybell T and Triscone J M 2006 J. Appl. Phys. 100 051608
[1] Numerical study of growth competition between twin grains during directional solidification by using multi-phase field method
Chang-Sheng Zhu(朱昶胜), Ting Wang(汪婷), Li Feng(冯力), Peng Lei(雷鹏), and Fang-Lan Ma(马芳兰). Chin. Phys. B, 2022, 31(2): 028102.
No Suggested Reading articles found!