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Chin. Phys. B, 2023, Vol. 32(4): 047701    DOI: 10.1088/1674-1056/aca39e

Domain size and charge defects affecting the polarization switching of antiferroelectric domains

Jinghao Zhu(朱静浩)1, Zhen Liu(刘震)2,†, Boyi Zhong(钟柏仪)3, Yaojin Wang(汪尧进)2,‡, and Baixiang Xu(胥柏香)3,§
1 Nanjing Research Institute of Electronics Technology, Nanjing 210039, China;
2 School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
3 Mechanics of Functional Materials, Department of Materials Science, Technical University of Darmstadt, Darmstadt 64287, Germany
Abstract  The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood. In this work, by using the phase field simulation, we have studied the polarization switching property of antiferroelectric domains. Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains, and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops. Moreover, we introduce charge defects into the sample and numerically investigate their influence. It is also shown that charge defects can induce local ferroelectric domains, which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop. Our results give insights into understanding the antiferroelectric phase transformation and optimizing the energy storage property in experiments.
Keywords:  antiferroelectric domains      phase field simulation      domain size      charge defects  
Received:  18 July 2022      Revised:  14 November 2022      Accepted manuscript online:  17 November 2022
PACS: (Scaling effects)  
  77.80.Dj (Domain structure; hysteresis)  
  77.84.Lf (Composite materials)  
Fund: Project supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20190405) and the LOEWE program of the State of Hesse, Germany, within the project FLAME (Fermi Level Engineering of Antiferroelectric Materials for Energy Storage and Insulation Systems).
Corresponding Authors:  Zhen Liu, Yaojin Wang, Baixiang Xu     E-mail:;;

Cite this article: 

Jinghao Zhu(朱静浩), Zhen Liu(刘震), Boyi Zhong(钟柏仪), Yaojin Wang(汪尧进), and Baixiang Xu(胥柏香) Domain size and charge defects affecting the polarization switching of antiferroelectric domains 2023 Chin. Phys. B 32 047701

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