Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

doi:10.1088/1674-1056/28/6/067302

Abstract

Displacement damage induced by neutron irradiation in China Spallation Neutron Source (CSNS) is studied on bipolar transistors with lateral PNP, substrate PNP, and vertical NPN configurations, respectively. Comparison of the effects on different type transistors is conducted based on displacement damage factor, and the differences are analyzed through minority carrier lifetime calculation and structure analysis. The influence of CSNS neutrons irradiation on the lateral PNP transistors is analyzed by the gate-controlled method, including the oxide charge accumulation, surface recombine velocity, and minority carrier lifetime. The results indicate that the total ionizing dose in CSNS neutron radiation environment is negligible in this study. The displacement damage factors based on 1-MeV equivalent neutron flux of different transistors are consistent between Xi'an pulse reactor (XAPR) and CSNS.

Keywords: displacement damage China Spallation Neutron Source (CSNS) reactor neutrons bipolar transistors

Received: 01 January 2019
Revised: 25 March 2019
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.30.Pq	(Bipolar transistors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	29.25.Dz	(Neutron sources)

Corresponding Authors: Wei Chen
E-mail: chenwei@nint.ac.cn

Cite this article:

Yan Liu(刘岩), Wei Chen(陈伟), Chaohui He(贺朝会), Chunlei Su(苏春垒), Chenhui Wang(王晨辉), Xiaoming Jin(金晓明), Junlin Li(李俊霖), Yuanyuan Xue(薛院院) Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons 2019 Chin. Phys. B 28 067302

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Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

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