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SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current |
| Baoxing Duan(段宝兴)†, Kaishun Luo(罗开顺), and Yintang Yang(杨银堂) |
| Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract A novel silicon carbide gate-controlled bipolar field effect composite transistor with polysilicon region (SiC GCBTP) is proposed. Different from the traditional electrode connection mode of SiC vertical diffused MOS (VDMOS), the P$+$ region of P-well is connected with the gate in SiC GCBTP, and the polysilicon region is added between the P$+$ region and the gate. By this method, additional minority carriers can be injected into the drift region at on-state, and the distribution of minority carriers in the drift region will be optimized, so the on-state current is increased. In terms of static characteristics, it has the same high breakdown voltage (811 V) as SiC VDMOS whose length of drift is 5.5 μm. The on-state current of SiC GCBTP is $2.47\times 10^{-3}$ A/μm ($V_{\rm G}=10$ V, $V_{\rm D}=10$ V) which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS. In terms of dynamic characteristics, the turn-on time of SiC GCBTP is only 0.425 ns. And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor (IGBT), which is 114.72 ns.
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Received: 13 April 2022
Revised: 05 July 2022
Accepted manuscript online: 13 July 2022
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PACS:
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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84.30.Jc
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(Power electronics; power supply circuits)
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85.30.Pq
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(Bipolar transistors)
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66.70.Df
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(Metals, alloys, and semiconductors)
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| Fund: Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province, China (Grant No. 2018JC-017) and 111 Project (Grant No. B12026). |
Corresponding Authors:
Baoxing Duan
E-mail: bxduan@163.com
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Cite this article:
Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂) SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current 2023 Chin. Phys. B 32 047702
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