| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A 4H-SiC trench IGBT with controllable hole-extracting path for low loss |
| Lijuan Wu(吴丽娟)†, Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会) |
| Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science&Technology, Changsha 410114, China |
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Abstract A novel 4H-SiC trench insulated gate bipolar transistor (IGBT) with a controllable hole-extracting (CHE) path is proposed and investigated in this paper. The CHE path is controlled by metal semiconductor gate (MES gate) and metal oxide semiconductor gate (MOS gate) in the p-shield region. The grounded p-shield region can significantly suppress the high electric field around gate oxide in SiC devices, but it weakens the conductivity modulation in the SiC trench IGBT by rapidly sweeping out holes. This effect can be eliminated by introducing the CHE path. The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage ($V_{\rm ON}$). During the turn-off transient, the CHE path is formed, which contributes to a decreased turn-off loss ($E_{\rm OFF}$). Based on numerical simulation, the $E_{\rm OFF}$ of the proposed IGBT is reduced by 89% compared with the conventional IGBT at the same $V_{\rm ON}$ and the $V_{\rm ON}$ of the proposed IGBT is reduced by 50% compared to the grounded p-shield IGBT at the same $E_{\rm OFF}$. In addition, the average power reduction for the proposed device can be 51.0% to 81.7% and 58.2% to 72.1% with its counterparts at a wide frequency range of 500 Hz to 10 kHz, revealing a great improvement of frequency characteristics.
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Received: 15 April 2022
Revised: 04 July 2022
Accepted manuscript online: 05 August 2022
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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85.30.Pq
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(Bipolar transistors)
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| Fund: Project supported by the Hunan Provincial Natural Science Foundation of China (Grant No. 2021JJ30738), Scientific Research Fund of Hunan Provincial Education Department (Grant No. 19K001), and Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering's Open Fund Project-2020 (Grant No. 202016). |
Corresponding Authors:
Lijuan Wu
E-mail: 413675452@qq.com
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Cite this article:
Lijuan Wu(吴丽娟), Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会) A 4H-SiC trench IGBT with controllable hole-extracting path for low loss 2023 Chin. Phys. B 32 048503
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[1] Han L B, Liang L, Kang Y and Qiu Y F 2021 IEEE Trans. on Power Electron. 36 2080
[2] Yonezawa Y 2018 International Power Electronics Conference, May 20-24, 2018, Niigata, Japan p. 3603
[3] Chowdhury S and Chow T P 2016 Proceedings of the 28th International Symposium on Power Semiconductor Devices and ICs, June 12-16, 2016, Žofin Palace, Prague, p. 75
[4] Fukuda K, Okamoto D, Okamoto M, et al. 2015 IEEE Trans. Electron Dev. 62 396
[5] Ryu S, Capell C, Brunt E V, et al. 2015 Semicond. Sci. Technol. 30 084001
[6] Östling M, Ghandi R and Zetterling C M 2011 Proceedings of the 23th International Symposium on Power Semiconductor Devices and ICs, May 23-26, 2011, San Diego, USA, p. 10
[7] Wei J, Zhang M, Jiang H P, Li B K and Chen K J 2019 IEEE Trans. on Electron Devices 66 3034
[8] Wei J, Zhang M, Jiang H P, To S, Kim S H, Kim J Y and Chen J K 2018 Proceedings of the 30th International Symposium on Power Semiconductor Devices and ICs, May 13-17, Chicago, USA, p. 411
[9] Liu Y J, Wang Y, Hao Y, Yu C H and Cao F 2017 IEEE Trans. Electron Dev. 64 488
[10] Liu Y J, Wang Y, Hao Y, Fang J P, Shan C and Cao F 2017 IEEE Trans. Electron Dev. 64 4575
[11] Tang G N, Tang X Y, Song Q W, Yang S, Zhang Y M, Zhang Y M and Zhang Y M 2020 IEEE Trans. Electron Dev. 67 198
[12] Wang Y, Yu C F, Mao H K, Wu X, Su F W, Li X J, Yang J Q 2020 IEEE Journal of the Electron Devices Society 8 1010
[13] Sawada M, Sakurai Y, Ohi K, Ikura Y, Yamazaki T and Nabetani Y 2017 Proceedings of the 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), May 28-June 1, Sapporo, Japan, p. 65
[14] Peng X, Li Z H, Zhao Y S, et al. 2019 Proceedings of the 31th International Symposium on Power Semiconductor Devices and ICs, May 19-23, Shanghai, China, p. 51
[15] Wei J, Zhang S, Luo X R, Fan D and Zhang B 2021 IEEE Trans. Electron Dev. 68 2572
[16] Sung W, Wang J, Huang A Q and Baliga B J 2009 Proceedings of the 21th International Symposium on Power Semiconductor Devices and IC's, June 14-18, Barcelona, Spain, p. 271
[17] Usman M and Nawaz M 2014 Solid-State Electron. 92 5
[18] Usman M, Buono B and Hallén A 2012 IEEE Trans. Electron Dev. 59 3371
[19] Tamaki T, Walden G G, Sui Y and Cooper J A 2008 IEEE Trans. Electron Dev. 55 1920
[20] Nawaz M and Chimento F 2014 Mater. Sci. Forum. 778 1034 |
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