Abstract The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.
Corresponding Authors:
Xing-Ji Li
E-mail: lxj0218@hit.edu.cn
Cite this article:
Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀) Radiation effects of 50-MeV protons on PNP bipolar junction transistors 2022 Chin. Phys. B 31 028502
[1] Li X J, Liu C M and Yang J Q 2015 IEEE Trans. Nucl. Sci62 1375 [2] Ball D R, Schrimpf R and Barnaby H J 2003 IEEE Trans. Nucl. Sci49 3185 [3] Kosala Y, Vahid M, Wang S Q, Min P K, Sunil U, Tamara I S, Michael C H and Minseo P 2018 Microelectron. Reliab.91 262 [4] Liu C M, Yonder B, Yang J Q, Wei Y D, Wang M, Yuan Y, Xu C, Xie Y F, Li X J and Zhou S Q 2018 Semicond. Sci. Technol.33 095022 [5] Nguyen L B, Kim H S, Reed R A, Label K A, Marshall C J, Marshall P W and Ladbury R L 2000 IEEE Trans. Nucl. Sci47 2492 [6] Witczak S C, Messenger S R, Fleetwood D M, Schrimpf R D, Langlois M S, Mishler M C and Adams D A 2019 IEEE Trans. Nucl. Sci66 795 [7] Li X J, Yang J Q, Liu C M, Bai G, Luo W B and Li P W 2018 Microelectron. Reliab.82 130 [8] Liu C M, Li X J, Yang J Q, Ma G L and Xiao L Y 2015 Radiat. Phys. Chem.111 36 [9] Liu Y, Chen W, He C H, Su C L, Wang C H, Jin X M, Li J L and Xue Y Y 2019 Chin. Phys. B28 067302 [10] Wang C H, Chen W, Yao Z B, Jin X M, Liu Y, Yang S C and Wang Z K 2016 Nucl. Instrum. Methods Phys. Res., Sect. A831 322 [11] Hua Z Y 2018 The mechanism of hydrogen and electric field on 3 MeV proton irradiation damage of gate-controlled bipolar transistor (MS Dissertation) (Harbin:Harbin Institute of Technology) (in Chinese) [12] Chao D S, Shih H Yu, Jiang J Y, Huang C F, Chiang C Y, Ku C S, Yen C T, Lee L S, Hsu F J, Chu K T, Hung C C and Lee C Y 2019 Jpn. J. Appl. Phys.58 SBBD08 [13] Bharathi M N, Vinayakprasanna N H, Arshiya A, Pradeep T M, Pushpa N, Praveen K C, Bhushan K G and Gnana Prakash A P 2017 Radiat Eff. Defects Solids172 235 [14] Li X J, Yang J Q and Liu C M 2018 IEEE Trans. Nucl. Sci65 539 [15] Law M K, Tang F, Wang B and Bermak A 2015 IEEE Electron Dev. Lett.36 1111 [16] Vladimir D V and Predrag O 2013 Inform. MIDEM43 2740 [17] Kosier S L and Shrimpf R D 1993 IEEE Trans. Nucl. Sci40 1276 [18] Kulkarni S R, Ravindra M, Madhu K V 2008 Radiat Eff. Defects Solids163 873 [19] Griffin P, King D and Kolb N 2006 Nucl. Instrum. Methods Phys. Res. Sect. A562 684 [20] Yang J Q, Sun X S, Yu X Q, Qin Z H and Li X J 2020 Nucl. Instrum. Methods Phys. Res. Sect. B467 86 [21] Madhu K V, Kulkarni S R, Ravindra M and Damle R 2007 Nucl. Instrum. Methods Phys. Res. Sect. B254 98
[1]
Effects of preparation parameters on growth and properties of β-Ga2O3 film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
