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Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy |
| Fang-Qi Lin(林芳祁)1,2, Nong Li(李农)1,2, Wen-Guang Zhou(周文广)1,2, Jun-Kai Jiang(蒋俊锴)1,2, Fa-Ran Chang(常发冉)1, Yong Li(李勇)1, Su-Ning Cui(崔素宁)1,2, Wei-Qiang Chen(陈伟强)1,2, Dong-Wei Jiang(蒋洞微)1,2,3, Hong-Yue Hao(郝宏玥)1,2,3, Guo-Wei Wang(王国伟)1,2,3,†, Ying-Qiang Xu(徐应强)1,2,3,‡, and Zhi-Chuan Niu(牛智川)1,2,3,§ |
1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract By optimizing the V/III beam-equivalent pressure ratio, a high-quality InAs/GaSb type-II superlattice material for the long-wavelength infrared (LWIR) range is achieved by molecular beam epitaxy (MBE). High-resolution x-ray diffraction (HRXRD), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectrometer are used to characterize the material growth quality. The results show that the full width at half maximum (FWHM) of the superlattice zero-order diffraction peak, the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks, and the surface roughness get the best results when the beam-equivalent pressure (BEP) ratio reaches the optimal value, which are 28 arcsec, 13 arcsec, and 1.63 Å, respectively. The intensity of the zero-order diffraction peak is strongest at the optimal value. The relative spectral response of the LWIR detector shows that it exhibits a 100% cut-off wavelength of 12.6 μm at 77 K. High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.
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Received: 29 December 2021
Revised: 03 March 2022
Accepted manuscript online: 28 March 2022
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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68.65.Cd
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(Superlattices)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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| Fund: Project supported by the National Key Technology R&D Program of China (Grant Nos. 2018YFA0209104, 2018YFA0209102, 2019YFA0705203, and 2019YFA070104), the National Natural Science Foundation of China (Grant Nos. 61790581, 61274013, and 62004189), and the Key Research Program of the Chinese Academy of Sciences (Grant No. XDPB22). |
Corresponding Authors:
Guo-Wei Wang, Ying-Qiang Xu, Zhi-Chuan Niu
E-mail: wangguowei@semi.c.cn;yingqxu@semi.ac.cn;zcniu@semi.ac.cn
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Cite this article:
Fang-Qi Lin(林芳祁), Nong Li(李农), Wen-Guang Zhou(周文广), Jun-Kai Jiang(蒋俊锴), Fa-Ran Chang(常发冉), Yong Li(李勇), Su-Ning Cui(崔素宁), Wei-Qiang Chen(陈伟强), Dong-Wei Jiang(蒋洞微), Hong-Yue Hao(郝宏玥), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), and Zhi-Chuan Niu(牛智川) Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy 2022 Chin. Phys. B 31 098504
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