1 School of Opto-Electronic Information Science and Technology, Yantai University, Yantai 264005, China; 2 Wenjing College, Yantai University, Yantai 264005, China
Abstract Silicon-based electro-optic modulators are the key devices in integrated optoelectronics. Integration of the graphene layer and the photonic crystal (PC) cavity is a promising way of achieving compact modulators with high efficiency. In this paper, a high-quality (Q) acceptor-type PC nanocavity is employed to integrate with a single-layer graphene for realizing strong modulation. Through tuning the chemical potential of graphene, a large wavelength shift of 2.62 nm and a Q factor modulation of larger than 5 are achieved. A modulation depth (12.8 dB) of the reflection spectrum is also obtained. Moreover, the optimized PC nanocavity has a large free spectral range of 131.59 nm, which can effectively enhance the flexibility of the modulator. It shows that the proposed graphene-based PC nanocavity is a potential candidate for compact, high-contrast, and low-power absorptive modulators in integrated silicon chips.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11674273) and the Science and Technology Plan Projects of Colleges and Universities of Shandong Province, China (Grant No. J15LJ52).
Long-Pan Wang(汪陇盼), Cheng Ren(任承), De-Zhong Cao(曹德忠), Rui-Jun Lan(兰瑞君), and Feng Kang(康凤) Dynamic modulation in graphene-integrated silicon photonic crystal nanocavity 2021 Chin. Phys. B 30 064209
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