Recent advances of defect-induced spin and valley polarized states in graphene
Yu Zhang(张钰)1,2,†, Liangguang Jia(贾亮广)1, Yaoyao Chen(陈瑶瑶)1, Lin He(何林)3, and Yeliang Wang(王业亮)1,‡
1 School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China; 2 Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China; 3 Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China
Abstract Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale, and hence, lead to rich quantum states, highlighting promising directions for spintronics and valleytronics. In this article, we mainly review the recent scanning tunneling microscopy (STM) advances on the spin and/or valley polarized states induced by an individual atomic-scale defect in graphene, including a single-carbon vacancy, a nitrogen-atom dopant, and a hydrogen-atom chemisorption. Lastly, we give a perspective in this field.
Fund: This work is financial supported by the National Natural Science Foundation of China (Grant Nos. 92163206 and 61725107), the National Key Research and Development Program of China (Grant No. 2020YFA0308800), Beijing Natural Science Foundation (Grant No. Z190006), and China Postdoctoral Science Foundation (Grant No. 2021M700407).
Corresponding Authors:
Yu Zhang, Yeliang Wang
E-mail: yzhang@bit.edu.cn;yeliang.wang@bit.edu.cn
Cite this article:
Yu Zhang(张钰), Liangguang Jia(贾亮广), Yaoyao Chen(陈瑶瑶), Lin He(何林), and Yeliang Wang(王业亮) Recent advances of defect-induced spin and valley polarized states in graphene 2022 Chin. Phys. B 31 087301
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