Abstract An analytical model of the power metal-oxide-semiconductor field-effect transistor (MOSFET) with high permittivity insulator structure (HKMOS) with interface charge is established based on superposition and developed for optimization by charge compensation. In light of charge compensation, the disturbance aroused by interface charge is efficiently compromised by introducing extra charge for maximizing breakdown voltage (BV) and minimizing specific ON-resistance (Ron,sp). From this optimization method, it is very efficient to obtain the design parameters to overcome the difficulty in implementing the Ron,sp-BV trade-off for quick design. The analytical results prove that in the HKMOS with positive or negative interface charge at a given length of drift region, the extraction of the parameters is qualitatively and quantitatively optimized for trading off BV and Ron,sp with JFET effect taken into account.
Corresponding Authors:
Zhi-Gang Wang
E-mail: zhigangwang@swjtu.edu.cn
Cite this article:
Zhi-Gang Wang(汪志刚), Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮) Modeling of high permittivity insulator structure with interface charge by charge compensation 2022 Chin. Phys. B 31 028501
[1] Wang Y, Wang Z, Bai T and Kuo J B 2018 Trans. Electron Dev.65 1056 [2] Mao S J, Zhu Z Y, Wang G L, Zhu H L, Li J F and Zhao C 2016 Chin. Phys. Lett.33 118502 [3] Yao J F, Guo Y F, Zhang Z Y, Yang K M, Zhang M L and Xia T 2020 Chin. Phys. B29 038503 [4] Wu L J, Zhang Z J, Song Y, Yang H, Hu L M and Yuan N 2017 Chin. Phys. B26 027101 [5] Wang C L and Sun J 2009 Chin. Phys. B18 1231 [6] Chen X and Huang M 2012 Trans. Electron Dev.59 2430 [7] Huang J Q, He W W, Chen J, Luo J X, Lu K and Chai Z 2016 Chin. Phys. Lett33 096101 [8] Guan H, Lv H L, Guo H, Zhang Y M, Zhang Y M and Wu L F 2015 Chin. Phys. B24 126701 [9] Wang Z, Wang X and Kuo J B 2018 Trans. Electron Dev.65 4947 [10] Zhang W, Zhang B, Qiao M, Luo X and Li Z 2016 Trans. Electron Dev.64 224 [11] Chen X, Wang Z, Wang X and Kuo J B 2018 Chin. Phys. B27 048502 [12] Qi L W, Meng J, Liu X Y, Weng Y, Liu Z C, Zhang D H, Zhou J T and Jin Z 2020 Chin. Phys. B29 104212 [13] Hu S, Yang L, Mi M H, Hou B, Liu S, Zhang M, Wu M, Zhu Q, Wu S, Lu Y, Zhu J J, Zhou X W, Lv L, Ma X H and Hao Y 2020 Chin. Phys. B29 087305 [14] Wang Z G, Zhang B, Fu Q, Xie G and Li Z J 2012 IEEE Electron Dev. Lett.33 703 [15] Ren M, Li Z H, Deng G M, Zhang L X, Zhang M, Liu X L, Xie J X and Zhang B 2012 Chin. Phys. B21 048502 [16] Huang H, Xu S, Xu W, Hu K, Cheng J, Hu H and Yi B 2020 Trans. Electron Dev.67 2463 [17] Huang H, Hu K, Xu W, Xu S, Cui W, Zhang W and Ng W T 2020 Trans. Electron Dev.67 3898 [18] Wangsness R K 1979 Electromagnetic fields (New York:Wiley) [19] Baliga B J 2010 Fundamentals of power semiconductor devices (Berlin:Springer Science & Business Media) [20] Hou X Y, Huang R, Chen G, Liu S, Zhang X, Yu B and Wang Y Y 2008 Chin. Phys. B17 0685 [21] Chen S Z and Sheng K 2014 Chin. Phys. B23 077201 [22] Zhang W, Zhang B, Qiao M, Li Z, Luo X and Li Z 2016 Trans. Electron Dev.63 1984
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
