Design and simulation of AlN-based vertical Schottky barrier diodes

doi:10.1088/1674-1056/abe0c7

Abstract The key parameters of vertical AlN Schottky barrier diodes (SBDs) with variable drift layer thickness (DLT) and drift layer concentration (DLC) are investigated. The specific on-resistance (R_on,sp) decreased to 0.5 mΩ·cm² and the breakdown voltage (V_BR) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10¹⁵ cm^-3 to 3×10¹⁶ cm^-3. The V_BR increases from 1.5 kV to 3.4 kV and the R_on,sp also increases to 12.64 mΩ·cm² by increasing DLT from 4-μ to 11-μ. The V_BR enhancement results from the increase of depletion region extension. The Baliga's figure of merit (BFOM) of 3.8 GW/cm² was obtained in the structure of 11-μ DLT and 10¹⁶ cm^-3 DLC without FP. When DLT or DLC is variable, the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate (FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.

Keywords: aluminum nitride Schottky barrier diodes specific on-resistance R_on sp breakdown voltage V_BR

Received: 20 November 2020
Revised: 06 January 2021
Accepted manuscript online: 28 January 2021

PACS:	73.61.Ey	(III-V semiconductors)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	51.50.+v	(Electrical properties)

Fund: Project supported by Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002) and Ningbo Science and Technology Innovation 2025 (Grant No. 2019B10123).

Corresponding Authors: Wei-Hang Zhang, Jin-Cheng Zhang
E-mail: whzhang@xidian.edu.cn;jchzhang@xidian.edu.cn

Cite this article:

Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) Design and simulation of AlN-based vertical Schottky barrier diodes 2021 Chin. Phys. B 30 067305

[1] Kuzmik J 2001 IEEE Electron Device Lett. 22 510
[2] Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, Denbaars S P, Speck J S and Mishra U K 2005 IEEE Electron Device Lett. 26 781
[3] Lee J G, Park B R, Cho C H, Seo K S and Cha H Y 2013 IEEE Electron Device Lett. 34 214
[4] Zhou Q, Jin Y, Shi Y Y, Mou J Y, Bao X, Chen B W and Zhang B 2015 IEEE Electron Device Lett. 36 660
[5] Zhou Q, Yang Y, Hu K, Zhu R P, Chen W J and Zhang B 2017 IEEE Transactions on Industrial Electronics. 64 8971
[6] Wang H, Kwan A M H, Jiang Q and Chen K J 2015 IEEE Trans. Electron Devices 62 1143
[7] Horii T, Miyazaki T, Saito Y, Hashimoto S, Tanabe T and Kiyama M 2009 Materials Science Forum. 615-617 963
[8] Saitoh Y, Sumiyoshi K, Okada M, Horii T and Nakamura T 2013 Appl. Phys. Express 3 081001
[9] Lei Y, Shi H, Lu H, Chen D, Zhang R and Zheng Y 2013 J. Semicond. 34 054007
[10] Tanaka N, Hasegawa K, Yasunishi K, Murakami N and Oka T 2015 Appl. Phys. Express 8 071001
[11] Ozbek A M and Baliga B J 2011 IEEE Electron Device Lett. 32 300
[12] Li Y, Shen B, Wang M, Yin R, Zhang J, Tao M and Wen C P 2020 IEEE Electron Device Lett. 41 329
[13] Bian Z K, Zhang J C, Zhao S L, Zhang Y C and Hao Y 2020 IEEE Electron Device Lett. 41 1476
[14] Irokawa Y, Villora E A G and Shimamura K 2012 J. Appl. Phys. 51 040206
[15] Fu H, Baranowski I, Huang X, Chen H, Lu Z and Montes J 2017 IEEE Electron Device Lett. 38 1286
[16] Kinoshita T, Nagashima T, Obata T, et al. 2015 J. Appl. Phys. 8 061003
[17] Baliga B J 2008 Fundamentals of Power Semiconductor Devices pp. 96-97, 171
[18] Sandupatla A, Arulkumaran S, Ng G I, Ranjan K, Deki M, Nitta S, Honda Y and Amano H 2019 AIP Adv. 9 045007

[1]	A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). Chin. Phys. B, 2022, 31(7): 078501.
[2]	Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Chin. Phys. B, 2022, 31(4): 047302.
[3]	A simple method to synthesize worm-like AlN nanowires and its field emission studies Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志). Chin. Phys. B, 2021, 30(8): 087302.
[4]	A super-junction SOI-LDMOS with low resistance electron channel Wei-Zhong Chen(陈伟中), Yuan-Xi Huang(黄元熙), Yao Huang(黄垚), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). Chin. Phys. B, 2021, 30(5): 057303.
[5]	Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy Jing-Jing Chen(陈晶晶), Jun Huang(黄俊), Xu-Jun Su(苏旭军), Mu-Tong Niu(牛牧童), Ke Xu(徐科). Chin. Phys. B, 2020, 29(7): 076802.
[6]	Variable-K double trenches SOI LDMOS with high-concentration P-pillar Lijuan Wu(吴丽娟), Lin Zhu(朱琳), Xing Chen(陈星). Chin. Phys. B, 2020, 29(5): 057701.
[7]	Effect of AlN coating on hydrogen permeability and surface structure of VT6 alloy by vacuum arc ion plating Zi-Yi Ding(丁子祎). Chin. Phys. B, 2019, 28(10): 108101.
[8]	Review of gallium oxide based field-effect transistors and Schottky barrier diodes Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华). Chin. Phys. B, 2019, 28(1): 017105.
[9]	Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode Zhong Jian (钟健), Yao Yao (姚尧), Zheng Yue (郑越), Yang Fan (杨帆), Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Shen Zhen (沈震), Zhou Gui-Lin (周桂林), Zhou De-Qiu (周德秋), Wu Zhi-Sheng (吴志盛), Zhang Bai-Jun (张伯君), Liu Yang (刘扬). Chin. Phys. B, 2015, 24(9): 097303.
[10]	Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓). Chin. Phys. B, 2014, 23(9): 097308.
[11]	Resonance-mode effect on piezoelectric microcantilever performance in air, with a focus on the torsional modes Qiu Hua-Cheng (邱华诚), Dara Feili, Wu Xue-Zhong (吴学忠), Helmut Seidel. Chin. Phys. B, 2014, 23(2): 027701.
[12]	F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode E. Yağlıoğlu, Ö. Tüzün Özmen. Chin. Phys. B, 2014, 23(11): 117306.
[13]	Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors Feng Qian(冯倩), Li Qian(李倩), Xing Tao(邢韬) Wang Qiang(王强), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) . Chin. Phys. B, 2012, 21(6): 067305.
[14]	Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes Cao Zhi-Fang(曹芝芳), Lin Zhao-Jun(林兆军), LŰ Yuan-Jie(吕元杰), Luan Chong-Biao(栾崇彪), Yu Ying-Xia(于英霞), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) . Chin. Phys. B, 2012, 21(1): 017103.
[15]	Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET Liu Hong-Xia(刘红侠), Li Bin(李斌), Li Jin(李劲), Yuan Bo(袁博), and Hao Yue(郝跃). Chin. Phys. B, 2010, 19(12): 127303.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Design and simulation of AlN-based vertical Schottky barrier diodes

Cite this article:

Online attention