Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors

doi:10.1088/1674-1056/ac1efd

Abstract The role of the oxygen in AlGaN/GaN high electron mobility transistors (HEMTs) before and after semi-on state stress was discussed. Comparing with the electrical characteristics of the devices in vacuum, air, and oxygen atmosphere, it is revealed that the oxygen has significant influence on the electric characteristics and the hot-carrier-stress-induced degradation of the device. Comparing with the situation in vacuum, the gate leakage increased an order of magnitude in oxygen and air atmosphere. Double gate structure was used to separate the barrier leakage and surface leakage of AlGaN/GaN HEMT it is found that surface leakage is the major influencing factor in gate leakage of SiN-passivated devices before and after semi-on state stress. During semi-on state stress in the oxygen atmosphere, the electric-field-driven oxidation process promoted the oxidation of the nitride layer, and the oxidation layer in the SiN/AlGaN interface leads to the decreasing of the surface leakage.

Keywords: semi-on state stress AlGaN/GaN HEMTs oxygen atmosphere

Received: 24 May 2021
Revised: 19 July 2021
Accepted manuscript online: 19 August 2021

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	71.55.Eq	(III-V semiconductors)
	71.55.Ak	(Metals, semimetals, and alloys)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62104167), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20210863 and BK20180966), and by Qing Lan Project of Jiangsu Province, China.

Corresponding Authors: Lixiang Chen, Yunfei Sun
E-mail: chenlixiang0426@163.com;yfsun@usts.edu.cn

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Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞) Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors 2021 Chin. Phys. B 30 108502

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Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors

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