AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation

doi:10.1088/1674-1056/24/11/117307

Abstract

In this paper, Al₂O₃ ultrathin film used as the surface passivation layer for AlGaN/GaN high electron mobility transistor (HEMT) is deposited by thermal atomic layer deposition (ALD), thereby avoiding plasma-induced damage and erosion to the surface. A comparison is made between the surface passivation in this paper and the conventional plasma enhanced chemical vapor deposition (PECVD) SiN passivation. A remarkable reduction of the gate leakage current and a significant increase in small signal radio frequency (RF) performance are achieved after applying Al₂O₃+BCB passivation. For the Al₂O₃+BCB passivated device with a 0.7 μ gate, the value of f_max reaches up to 100 GHz, but it decreases to 40 GHz for SiN HEMT. The f_max/f_t ratio (≥ 4) is also improved after Al₂O₃+BCB passivation. The capacitance-voltage (C-V) measurement demonstrates that Al₂O₃+BCB HEMT shows quite less density of trap states (on the order of magnitude of 10¹⁰ cm^-2) than that obtained at commonly studied SiN HEMT.

Keywords: AlGaN/GaN HEMT Al₂O₃ BCB passivation

Received: 08 June 2015
Revised: 23 July 2015
Accepted manuscript online:

PACS:	73.40.Ns	(Metal-nonmetal contacts)
	73.61.Ey	(III-V semiconductors)
	73.20.-r	(Electron states at surfaces and interfaces)

Corresponding Authors: Wei Ke, Ma Xiao-Hua
E-mail: weike@ime.ac.cn;xhma@xidian.edu.cn

Cite this article:

Zhang Sheng (张昇), Wei Ke (魏珂), Yu Le (余乐), Liu Guo-Guo (刘果果), Huang Sen (黄森), Wang Xin-Hua (王鑫华), Pang Lei (庞磊), Zheng Ying-Kui (郑英奎), Li Yan-Kui (李艳奎), Ma Xiao-Hua (马晓华), Sun Bing (孙兵), Liu Xin-Yu (刘新宇) AlGaN/GaN high electron mobility transistorwith Al₂O₃+BCB passivation 2015 Chin. Phys. B 24 117307

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AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation

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AlGaN/GaN high electron mobility transistorwith Al₂O₃+BCB passivation