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Chin. Phys. B, 2015, Vol. 24(6): 068101    DOI: 10.1088/1674-1056/24/6/068101
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Gate-dependent photoresponse in self-assembled graphene p-n junctions

Yin Wei-Hong (尹伟红), Wang Yu-Bing (王玉冰), Han Qin (韩勤), Yang Xiao-Hong (杨晓红)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
Abstract  

The intrinsic photocurrent generation mechanism of a self-assembled graphene p–n junction operating at 1.55 μ is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p–n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels.

Keywords:  graphene      photodetector      photovoltage      photothermoelectric  
Received:  16 December 2014      Revised:  20 January 2015      Accepted manuscript online: 
PACS:  81.05.ue (Graphene)  
  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
Fund: 

Project supported by the High Technology Research and Development Program of China (Grant No. 2013AA031401), the National Natural Science Foundation of China (Grant Nos. 61176053, 61274069, and 61435002), and the National Basic Research Program, China (Grant No. 2012CB933503).

Corresponding Authors:  Han Qin     E-mail:  hanqin@semi.ac.cn
About author:  81.05.ue; 85.60.Dw

Cite this article: 

Yin Wei-Hong (尹伟红), Wang Yu-Bing (王玉冰), Han Qin (韩勤), Yang Xiao-Hong (杨晓红) Gate-dependent photoresponse in self-assembled graphene p-n junctions 2015 Chin. Phys. B 24 068101

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