Gate-dependent photoresponse in self-assembled graphene p-n junctions

doi:10.1088/1674-1056/24/6/068101

Abstract

The intrinsic photocurrent generation mechanism of a self-assembled graphene p–n junction operating at 1.55 μ is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p–n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels.

Keywords: graphene photodetector photovoltage photothermoelectric

Received: 16 December 2014
Revised: 20 January 2015
Accepted manuscript online:

PACS:	81.05.ue	(Graphene)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)

Fund:

Project supported by the High Technology Research and Development Program of China (Grant No. 2013AA031401), the National Natural Science Foundation of China (Grant Nos. 61176053, 61274069, and 61435002), and the National Basic Research Program, China (Grant No. 2012CB933503).

Corresponding Authors: Han Qin
E-mail: hanqin@semi.ac.cn

About author: 81.05.ue; 85.60.Dw

Cite this article:

Yin Wei-Hong (尹伟红), Wang Yu-Bing (王玉冰), Han Qin (韩勤), Yang Xiao-Hong (杨晓红) Gate-dependent photoresponse in self-assembled graphene p-n junctions 2015 Chin. Phys. B 24 068101

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Gate-dependent photoresponse in self-assembled graphene p-n junctions

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