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High-quality GaAs/InSb core-shell nanowires grown by molecular-beam epitaxy |
| Ran Zhuo(卓然)1,2, Haiyan Shi(师海彦)1, Donghai Li(李东海)1,2, Xiyu Hou(侯曦宇)1,2, Yukun Yin(殷钰坤)1,2, Dong Pan(潘东)1,2,†, and Jianhua Zhao(赵建华)1,3 |
1 State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China |
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Abstract High-quality GaAs/InSb core-shell nanowires have garnered significant research interest owing to the exceptional properties of InSb, including its high electron mobility, strong spin-orbit coupling, and large g-factor, which are pivotal for advanced electronics and quantum technologies. Concurrently, GaAs/InSb core-shell nanowires have been extensively investigated due to their potential in realizing topological insulators and enabling dissipationless edge state transport, characteristics analogous to those sought in InAs/GaSb systems. However, the substantial lattice mismatch (~ 14.6%) between GaAs and InSb poses considerable challenges in achieving high-quality heteroepitaxial shells. Detailed investigations into the growth, microstructure, and strain distribution within such systems remain limited. Here, we demonstrate the successful growth of high-quality GaAs/InSb core-shell nanowires via molecular-beam epitaxy, utilizing self-catalyzed pure zinc blende GaAs nanowire cores. Through systematic optimization, we identified that an InSb shell growth temperature of 390 ℃ and an Sb/In beam equivalent pressure ratio of 4.36 are crucial for obtaining smooth, continuous shells with uniform thickness. Advanced transmission electron microscopy analysis confirmed the epitaxial zinc-blende structures of both the core and shell, revealing a dislocation density of approximately 50 μm-1 in the InSb shell, notwithstanding the lattice mismatch. Cross-sectional strain mapping, conducted via geometric phase analysis, unveiled a ~ 15% compressive strain at the GaAs/InSb interface, along with complex residual strain within the shell, attributed to the hexagonal nanowire geometry. Field-effect transistors fabricated with back-gated configurations exhibited n-type conduction, with a room-temperature carrier mobility of 50 cm2·V-1·s-1 and Ohmic behavior. Our work provides useful insights for the growth and optimization of other highly mismatched core-shell nanowires, thereby facilitating their integration into complex device architectures.
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Received: 24 August 2025
Revised: 24 September 2025
Accepted manuscript online: 14 October 2025
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PACS:
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81.05.Ea
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(III-V semiconductors)
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81.07.Vb
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(Quantum wires)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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61.72.Hh
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(Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))
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73.50.Dn
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(Low-field transport and mobility; piezoresistance)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12374459, 61974138, and 92065106), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302400), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB0460000), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant Nos. 2017156 and Y2021043). |
Cite this article:
Ran Zhuo(卓然), Haiyan Shi(师海彦), Donghai Li(李东海), Xiyu Hou(侯曦宇), Yukun Yin(殷钰坤), Dong Pan(潘东), and Jianhua Zhao(赵建华) High-quality GaAs/InSb core-shell nanowires grown by molecular-beam epitaxy 2026 Chin. Phys. B 35 088101
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