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Photoluminescence in transition metal dichalcogenides: Towards high quantum yield |
| Xin Yan(闫欣)1,2,†, Weijia Tang(汤唯佳)3,†, Guilong Gao(高贵龙)2,‡, Kai He(何凯)2,§, Dong Yao(姚东)2, Butian Zhang(张卜天)3, Shun Wang(王顺)3, and Youwei Zhang(张有为)3,¶ |
1 Rocket Force University of Engineering, Xi'an 710025, China;
2 State Key Laboratory of Ultrafast Optical Science and Technology, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China;
3 National Gravitation Laboratory, MOE Key Laboratory of Fundamental Physical Quantities Measurement, and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China |
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Abstract Owing to their atomic-level thickness, strong light-matter interaction, and wide range of bandgap tunability, transition metal dichalcogenides (TMDCs) hold great promise as light-emitting materials. Research on photoluminescence (PL) plays an indispensable role in the development of related fields, with efficiency being one of the most critical metrics for evaluating luminescence performance. Distinct from conventional direct-bandgap semiconductors, the unique exciton luminescence characteristics of TMDCs have established a new paradigm for investigating PL properties while simultaneously posing fresh challenges for modulating PL efficiency. Consequently, the study of PL efficiency modulation in TMDCs carries both fundamental physical significance and engineering application value. Based on an understanding of exciton physics in TMDCs, this review first summarizes strategies for enhancing PL quantum yield (QY) under low generation rates, including doping, defect engineering, interface engineering, and optical engineering. Subsequently, several strategies for suppressing exciton-exciton annihilation (EEA) under high generation rates are introduced. Finally, the current challenges are summarized, and an outlook on future development directions is provided.
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Received: 15 March 2026
Revised: 09 April 2026
Accepted manuscript online: 17 April 2026
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PACS:
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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71.35.-y
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(Excitons and related phenomena)
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78.55.-m
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(Photoluminescence, properties and materials)
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| Fund: This work was supported by the National Key &D Program of China (Grant No. 2021YFC2202500) and the Interdisciplinary Research Program of HUST (Grant No. 2024JCYJ063). |
Cite this article:
Xin Yan(闫欣), Weijia Tang(汤唯佳), Guilong Gao(高贵龙), Kai He(何凯), Dong Yao(姚东), Butian Zhang(张卜天), Shun Wang(王顺), and Youwei Zhang(张有为) Photoluminescence in transition metal dichalcogenides: Towards high quantum yield 2026 Chin. Phys. B 35 087801
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