Please wait a minute...
Chin. Phys. B, 2023, Vol. 32(1): 018101    DOI: 10.1088/1674-1056/ac8ce7

Optical and electrical properties of BaSnO3 and In2O3 mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

Jian-Ke Yao(姚建可)1,† and Wen-Sen Zhong(钟文森)2
1 College of Materials&New Energy, South China Normal University, Shanwei 516625, China;
2 Blue Lake Optic-electronic Company, Huizhou 516001, China
Abstract  For the crystalline temperature of BaSnO$_{3}$ (BTO) was above 650 ℃, the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process. In the article, the microstructure, optical and electrical of BTO and In$_{2}$O$_{3}$ mixed transparent conductive BaInSnO$_x$ (BITO) film deposited by filtered cathodic vacuum arc technique (FCVA) on glass substrate at room temperature were firstly reported. The BITO film with thickness of 300 nm had mainly In$_{2}$O$_{3}$ polycrystalline phase, and minor polycrystalline BTO phase with (001), (011), (111), (002), (222) crystal faces which were first deposited at room temperature on amorphous glass. The transmittance was 70%-80% in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength. The basic optical properties included the real and imaginary parts, high frequency dielectric constants, the absorption coefficient, the Urbach energy, the indirect and direct band gaps, the oscillator and dispersion energies, the static refractive index and dielectric constant, the average oscillator wavelength, oscillator length strength, the linear and the third-order nonlinear optical susceptibilities, and the nonlinear refractive index were all calculated. The film was the n-type conductor with sheet resistance of 704.7 $\Omega /\Box $, resistivity of 0.02 $\Omega \cdot$cm, mobility of 18.9 cm$^{2}$/V$\cdot$s, and carrier electron concentration of $1.6\times 10^{19}$ cm$^{-3}$ at room temperature. The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.
Keywords:  BaSnO3 and In2O3 mixed film      filtered cathodic vacuum arc deposition      transparent conductive films      microstructure      optical properties      electrical properties  
Received:  05 July 2022      Revised:  19 August 2022      Accepted manuscript online:  26 August 2022
PACS:  81.05.Hd (Other semiconductors)  
  78.66.-w (Optical properties of specific thin films)  
  73.61.-r (Electrical properties of specific thin films)  
Fund: Project supported by the Enterprise Science and Technology Correspondent for Guangdong Province, China (Grant No. GDKTP2021015200).
Corresponding Authors:  Jian-Ke Yao     E-mail:

Cite this article: 

Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森) Optical and electrical properties of BaSnO3 and In2O3 mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature 2023 Chin. Phys. B 32 018101

[1] Lee W J, Kim H J, Kang J, Jang D H, Kim T H, Lee J H and Kim K H 2017 Annu. Rev. Mater. Res. 47 391
[2] Prakash A and Jalan B 2019 Adv. Mater. Interfaces 6 1900479
[3] Sriram S, Bhaskaran M, Mitchell D and Mitchell A 2010 Cryst. Growth & Des. 10 761
[4] Tay B K, Zhao Z W and Chua D H 2006 Mater. Sci. Eng. R 52 1
[5] Chen B J, Sun X W and Tay B K 2004 Mater. Sci. Eng. B 106 300
[6] Mendelsberg R J, Lim S H, Zhu Y K, Wallig J, Milliron D J and Anders A 2011 J. Phys. D: Appl. Phys. 44 232003
[7] Nahm H H, Kim H D, Park J M, Kim H S and Kim Y H 2020 ACS Appl. Mater. Interfaces 12 3719
[8] Avinash M, Muralidharan M, Selvakumar S, Hussain S and Sivaji K 2020 J. Mater. Sci. Mater. Electron. 31 3375
[9] Sobahi T R, Amin M S and Mohamed R M 2018 Appl. Nanosci. 8 557
[10] Geneste G and Dezanneau G 2017 Solid State Ion. 308 121
[11] Wang Y, Chesnaud A, Bevillon E, Yang J and Dezanneau G 2011 Int. J. Hydrog. Energy 36 7688
[12] Wang Y, Chesnaud A, Bevillon E, Huang J and Yang J 2013 Funct. Mater. Lett. 6 1350041
[13] Fung T C, Chuang C S, Nomura K, Shieh H P D, Hosono H and Kanicki J 2008 J. Inform. Disp. 9 21
[14] Yakuphanoglu F, Cukurovali A and Yilmaz I 2004 Physica B 351 53
[15] Yao J K, Ye F and Fan P 2020 Chin. Phys. B 29 018105
[1] Effect of thickness of antimony selenide film on its photoelectric properties and microstructure
Xin-Li Liu(刘欣丽), Yue-Fei Weng(翁月飞), Ning Mao(毛宁), Pei-Qing Zhang(张培晴), Chang-Gui Lin(林常规), Xiang Shen(沈祥), Shi-Xun Dai(戴世勋), and Bao-An Song(宋宝安). Chin. Phys. B, 2023, 32(2): 027802.
[2] Surface structure modification of ReSe2 nanosheets via carbon ion irradiation
Mei Qiao(乔梅), Tie-Jun Wang(王铁军), Yong Liu(刘泳), Tao Liu(刘涛), Shan Liu(刘珊), and Shi-Cai Xu(许士才). Chin. Phys. B, 2023, 32(2): 026101.
[3] Effects of preparation parameters on growth and properties of β-Ga2O3 film
Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
[4] Slight Co-doping tuned magnetic and electric properties on cubic BaFeO3 single crystal
Shijun Qin(覃湜俊), Bowen Zhou(周博文), Zhehong Liu(刘哲宏), Xubin Ye(叶旭斌), Xueqiang Zhang(张雪强), Zhao Pan(潘昭), and Youwen Long(龙有文). Chin. Phys. B, 2022, 31(9): 097503.
[5] Microstructure and hardening effect of pure tungsten and ZrO2 strengthened tungsten under carbon ion irradiation at 700℃
Chun-Yang Luo(罗春阳), Bo Cui(崔博), Liu-Jie Xu(徐流杰), Le Zong(宗乐), Chuan Xu(徐川), En-Gang Fu(付恩刚), Xiao-Song Zhou(周晓松), Xing-Gui Long(龙兴贵), Shu-Ming Peng(彭述明), Shi-Zhong Wei(魏世忠), and Hua-Hai Shen(申华海). Chin. Phys. B, 2022, 31(9): 096102.
[6] Two-dimensional Sb cluster superlattice on Si substrate fabricated by a two-step method
Runxiao Zhang(张润潇), Zi Liu(刘姿), Xin Hu(胡昕), Kun Xie(谢鹍), Xinyue Li(李新月), Yumin Xia(夏玉敏), and Shengyong Qin(秦胜勇). Chin. Phys. B, 2022, 31(8): 086801.
[7] Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions
Jun-Yuan Yang(杨浚源), Zong-Kai Feng(冯棕楷), Ling Jiang(蒋领), Jie Song(宋杰), Xiao-Xun He(何晓珣), Li-Ming Chen(陈黎明), Qing Liao(廖庆), Jiao Wang(王姣), and Bing-Sheng Li(李炳生). Chin. Phys. B, 2022, 31(4): 046103.
[8] Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells
Humberto Noverola-Gamas, Luis Manuel Gaggero-Sager, and Outmane Oubram. Chin. Phys. B, 2022, 31(4): 044203.
[9] Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field
Da-Hua Ren(任达华), Qiang Li(李强), Kai Qian(钱楷), and Xing-Yi Tan(谭兴毅). Chin. Phys. B, 2022, 31(4): 047102.
[10] Radiation effects of 50-MeV protons on PNP bipolar junction transistors
Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀). Chin. Phys. B, 2022, 31(2): 028502.
[11] Tailoring the optical and magnetic properties of La-BaM hexaferrites by Ni substitution
Hafiz T. Ali, M. Ramzan, M Imran Arshad, Nicola A. Morley, M. Hassan Abbas, Mohammad Yusuf, Atta Ur Rehman, Khalid Mahmood, Adnan Ali, Nasir Amin, and M. Ajaz-un-Nabi. Chin. Phys. B, 2022, 31(2): 027502.
[12] First-principles study of structural and opto-electronic characteristics of ultra-thin amorphous carbon films
Xiao-Yan Liu(刘晓艳), Lei Wang(王磊), and Yi Tong(童祎). Chin. Phys. B, 2022, 31(1): 016102.
[13] Stability of liquid crystal systems doped with γ-Fe2O3 nanoparticles
Xu Zhang(张旭), Ningning Liu(刘宁宁), Zongyuan Tang(唐宗元), Yingning Miao(缪应宁), Xiangshen Meng(孟祥申), Zhenghong He(何正红), Jian Li(李建), Minglei Cai(蔡明雷), Tongzhou Zhao(赵桐州), Changyong Yang(杨长勇), Hongyu Xing(邢红玉), and Wenjiang Ye(叶文江). Chin. Phys. B, 2021, 30(9): 096101.
[14] Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films
Qing-Fen Jiang(姜清芬), Jie Lian(连洁), Min-Ju Ying(英敏菊), Ming-Yang Wei(魏铭洋), Chen-Lin Wang(王宸琳), and Yu Zhang(张裕). Chin. Phys. B, 2021, 30(9): 097801.
[15] Thermoelectric enhancement in triple-doped strontium titanate with multi-scale microstructure
Zheng Cao(曹正), Qing-Qiao Fu(傅晴俏), Hui Gu(顾辉), Zhen Tian(田震), Xinba Yaer(新巴雅尔), Juan-Juan Xing(邢娟娟), Lei Miao(苗蕾), Xiao-Huan Wang(王晓欢), Hui-Min Liu(刘慧敏), and Jun Wang(王俊). Chin. Phys. B, 2021, 30(9): 097204.
No Suggested Reading articles found!