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Optical and electrical properties of BaSnO3 and In2O3 mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature |
| Jian-Ke Yao(姚建可)1,† and Wen-Sen Zhong(钟文森)2 |
1 College of Materials&New Energy, South China Normal University, Shanwei 516625, China;
2 Blue Lake Optic-electronic Company, Huizhou 516001, China |
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Abstract For the crystalline temperature of BaSnO$_{3}$ (BTO) was above 650 ℃, the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process. In the article, the microstructure, optical and electrical of BTO and In$_{2}$O$_{3}$ mixed transparent conductive BaInSnO$_x$ (BITO) film deposited by filtered cathodic vacuum arc technique (FCVA) on glass substrate at room temperature were firstly reported. The BITO film with thickness of 300 nm had mainly In$_{2}$O$_{3}$ polycrystalline phase, and minor polycrystalline BTO phase with (001), (011), (111), (002), (222) crystal faces which were first deposited at room temperature on amorphous glass. The transmittance was 70%-80% in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength. The basic optical properties included the real and imaginary parts, high frequency dielectric constants, the absorption coefficient, the Urbach energy, the indirect and direct band gaps, the oscillator and dispersion energies, the static refractive index and dielectric constant, the average oscillator wavelength, oscillator length strength, the linear and the third-order nonlinear optical susceptibilities, and the nonlinear refractive index were all calculated. The film was the n-type conductor with sheet resistance of 704.7 $\Omega /\Box $, resistivity of 0.02 $\Omega \cdot$cm, mobility of 18.9 cm$^{2}$/V$\cdot$s, and carrier electron concentration of $1.6\times 10^{19}$ cm$^{-3}$ at room temperature. The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.
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Received: 05 July 2022
Revised: 19 August 2022
Accepted manuscript online: 26 August 2022
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PACS:
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81.05.Hd
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(Other semiconductors)
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78.66.-w
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(Optical properties of specific thin films)
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73.61.-r
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(Electrical properties of specific thin films)
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| Fund: Project supported by the Enterprise Science and Technology Correspondent for Guangdong Province, China (Grant No. GDKTP2021015200). |
Corresponding Authors:
Jian-Ke Yao
E-mail: yaojk@m.scnu.edu.cn
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Cite this article:
Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森) Optical and electrical properties of BaSnO3 and In2O3 mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature 2023 Chin. Phys. B 32 018101
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