| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Achieving high-performance multilayer MoSe2 photodetectors by defect engineering |
| Jintao Hong(洪锦涛)1, Fengyuan Zhang(张丰源)1, Zheng Liu(刘峥)2, Jie Jiang(蒋杰)3, Zhangting Wu(吴章婷)1,†, Peng Zheng(郑鹏)1, Hui Zheng(郑辉)1, Liang Zheng(郑梁)1, Dexuan Huo(霍德璇)4, Zhenhua Ni(倪振华)3, and Yang Zhang(张阳)1,‡ |
1 Laboratory for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China;
2 Jiangsu Province Special Equipment Safety Supervision and Inspection Institute, Wuxi 214170, China;
3 School of Physics, Southeast University, Nanjing 211189, China;
4 Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, China |
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Abstract Optoelectronic properties of MoSe2 are modulated by controlled annealing in air. Characterizations by Raman spectroscopy and XPS demonstrate the introduction of oxygen defects. Considerable increase in electron and hole mobilities reveals the highly improved electron and hole transport. Furthermore, the photocurrent is enhanced by nearly four orders of magnitudes under 7 nW laser exposure after annealing. The remarkable enhancement in the photoresponse is attributed to an increase in hole trapping centers and a reduction in resistance. Furthermore, the annealed photodetector shows a fast time response on the order of 10 ms and responsivity of 3×104 A/W.
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Received: 14 December 2020
Revised: 03 February 2021
Accepted manuscript online: 01 March 2021
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PACS:
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78.30.-j
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(Infrared and Raman spectra)
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85.30.Tv
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(Field effect devices)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61904043) and the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ19A040009). |
Corresponding Authors:
Zhangting Wu, Yang Zhang
E-mail: wuzhangting@hdu.edu.cn;yzhang09@hdu.edu.cn
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Cite this article:
Jintao Hong(洪锦涛), Fengyuan Zhang(张丰源), Zheng Liu(刘峥), Jie Jiang(蒋杰), Zhangting Wu(吴章婷), Peng Zheng(郑鹏), Hui Zheng(郑辉), Liang Zheng(郑梁), Dexuan Huo(霍德璇), Zhenhua Ni(倪振华), and Yang Zhang(张阳) Achieving high-performance multilayer MoSe2 photodetectors by defect engineering 2021 Chin. Phys. B 30 087801
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