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Improvements in reverse characteristics of diamond Schottky diodes by neutron irradiation |
| Yang-Fan Li(李洋帆)1,2, Wu-Ying Ma(马武英)1,3, Ruo-Zheng Wang(王若铮)3, Hong-Xia Guo(郭红霞)1, Lin-Yue Liu(刘林月)1, Ze-long Niu(牛泽隆)3, Ru-Xue Bai(白如雪)2, Ji-Fang Li(李济芳)2, Qi Li(李奇)3, Hong-Xing Wang(王宏兴)3,†, and Xiao-Ping Ou-Yang(欧阳晓平)1,‡ |
1 Northwest Institute of Nuclear Technology, Xi'an 710024, China;
2 The School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
3 Key Laboratory of Physical Electronics and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China |
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Abstract Diamond is emerging as a promising material for space applications due to its unique properties and potential high performance in extreme environments. In this work, we systematically study the impact of 1 MeV equivalent neutron irradiation on diamond Schottky barrier diodes (SBDs). According to current-voltage ($I$-$V$) measurements, the Schottky barrier height ($\varPhi_{\rm B}$) of the diamond SBD was increased from 1.23 eV to 1.32 eV, the ideality factor ($n$) was reduced from 1.88 to 1.66, and the reverse breakdown voltage increased by 100 V after neutron irradiation. Furthermore, the carrier concentration across the diamond drift layer was observed to decrease from $5.91 \times 10^{15}$ cm$^{-3}$ to $5.15 \times 10^{15}$ cm$^{-3}$ based on the capacitance-voltage ($C$-$V$) measurement. Moreover, the low-frequency noise analysis also indicated a decrease. Considering the changes in device performance, the metal/semiconductor interface traps were slightly reduced, and the Schottky barrier was significantly improved.
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Received: 10 July 2025
Revised: 02 September 2025
Accepted manuscript online: 25 September 2025
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PACS:
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81.05.ug
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(Diamond)
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78.40.Fy
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(Semiconductors)
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61.80.Hg
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(Neutron radiation effects)
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Corresponding Authors:
Hong-Xing Wang
E-mail: hxwangcn@mail.xjtu.edu.cn;oyxp2003@yahoo.com.cn
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Cite this article:
Yang-Fan Li(李洋帆), Wu-Ying Ma(马武英), Ruo-Zheng Wang(王若铮), Hong-Xia Guo(郭红霞), Lin-Yue Liu(刘林月), Ze-long Niu(牛泽隆), Ru-Xue Bai(白如雪), Ji-Fang Li(李济芳), Qi Li(李奇), Hong-Xing Wang(王宏兴), and Xiao-Ping Ou-Yang(欧阳晓平) Improvements in reverse characteristics of diamond Schottky diodes by neutron irradiation 2026 Chin. Phys. B 35 088104
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