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Defect-free InAs nanowires self-catalyzed growth on graphene/Ge by molecular beam epitaxy |
| Yanhui Zhang(张燕辉)1,4,†,‡, Haitao Jiang(姜海涛)2,†, Liuyan Fan(范柳燕)1, Zifan Huo(霍子帆)1, Ziteng Zhang(张孜腾)1, Can Zhou(周灿)1, Yajie Wang(王亚杰)3, Changlin Zheng(郑长林)3, Haibo Shu(舒海波)5,§, Xiaohao Zhou(周孝好)1,4, Pingping Chen(陈平平)1,4,¶, Jin Zou(邹进)6,7, and Wei Lu(陆卫)1,4,8 |
1 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
2 State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
3 State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China;
4 University of Chinese Academy of Sciences, Beijing 100049, China;
5 College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China;
6 Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, QLD 4072, Australia;
7 Institute of Energy Materials Science, University of Shanghai for Science and Technology, Shanghai 200093, China;
8 School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China |
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Abstract InAs nanowires (NWs) self-catalyzed grown on graphene surface frequently exhibit a large number of stacking-fault defects. However, the control of these defects in InAs NWs still remains a large challenge, which significantly limits the applications of InAs NWs in electronics and optoelectronics. In this work, the self-catalyzed growth of InAs NWs on graphene/Ge substrate by molecular beam epitaxy (MBE) is systematically investigated. Growth models for InAs NWs and parasitic islands on graphene/Ge are developed. Through rational design of growth parameters, the self-catalyzed growth of defect-free InAs NWs on graphene surfaces is ultimately achieved. Our experimental results indicate that lower growth temperature can effectively suppress the formation of stacking-fault defects in InAs NWs, no visible stacking-fault defects are observed in the samples grown below 510 ${^\circ}$C, and the intrinsic mechanism for this is clarified with the density functional theory (DFT) calculations.
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Received: 11 November 2025
Revised: 12 December 2025
Accepted manuscript online: 12 December 2025
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PACS:
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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62.23.Hj
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(Nanowires)
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68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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| Fund: Project supported by the Robotic AI-Scientist Platform of Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant Nos. 12027805, 62171136, and 12227901), and Programs of Shanghai Science and Technology Commission (Grant No. 22501100202). |
Corresponding Authors:
Yanhui Zhang, Haibo Shu, Pingping Chen
E-mail: zyhq@mail.sitp.ac.cn;shuhaibo@cjlu.edu.cn;ppchen@mail.sitp.ac.cn
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Cite this article:
Yanhui Zhang(张燕辉), Haitao Jiang(姜海涛), Liuyan Fan(范柳燕), Zifan Huo(霍子帆), Ziteng Zhang(张孜腾), Can Zhou(周灿), Yajie Wang(王亚杰), Changlin Zheng(郑长林), Haibo Shu(舒海波), Xiaohao Zhou(周孝好), Pingping Chen(陈平平), Jin Zou(邹进), and Wei Lu(陆卫) Defect-free InAs nanowires self-catalyzed growth on graphene/Ge by molecular beam epitaxy 2026 Chin. Phys. B 35 038101
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