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Effects of different growth conditions on epitaxial growth of (001) Ga2O3 films by MOCVD |
| Ke Qin(秦柯)1, Yun-Long He(何云龙)1,3,†, Zhan Wang(王湛)2,‡, Jing Sun(孙静)1,3, Ying Zhou(周颖)1, Yang Liu(刘洋)1, Jin-Wei Liu(刘金炜)1, Zhuo-Wen Huang(黄卓文)1, Ji-Wei Jiang(江继伟)4, Zhu Jin(金竹)5, Hui Zhang(张辉)4,5, Xiao-Li Lu(陆小力)1, Xue-Feng Zheng(郑雪峰)1, Xiao-Hua Ma(马晓华)1, and Yue Hao(郝跃)1 |
1 State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, National Engineering Research Center of Wide Band-gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Electronic Engineering, Xi'an University of Posts & Telecommunications, Xi'an 710121, China;
3 Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China;
4 Hangzhou Garen Semiconductor Co., Ltd., Hangzhou 311200, China;
5 State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China |
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Abstract The $\beta $-Ga$_{2}$O$_{3}$ epitaxial thin films were grown on (001) $\beta $-Ga$_{2}$O$_{3}$ substrates using metalorganic chemical vapor deposition (MOCVD), and the effects of key growth parameters — including temperature, pressure, and oxygen-to-gallium ratio (O$_{2}$/Ga) — on the crystalline quality, surface morphology, and electrical properties of the films were systematically investigated. The results show that while variations in these parameters did not alter the (001) preferential orientation of the $\beta $-Ga$_{2}$O$_{3}$ films, they significantly influenced other properties. By optimizing the growth parameters, films with a surface roughness as low as 1.5 nm and the full width at half maximum (FWHM) of 33.7 arcsec were achieved. X-ray photoelectron spectroscopy (XPS) analysis showed that the oxygen vacancy concentration was significantly reduced under the optimized O$_{2}$/Ga ratio of 820. Schottky barrier diodes (SBDs) were fabricated from three different $\beta $-Ga$_{2}$O$_{3}$ films grown under distinct O$_{2}$/Ga ratios. The SBD fabricated under the optimized O$_{2}$/Ga ratio of 820, exhibits a low turn-on voltage of 0.5 V, low on-resistance of 0.022 m$\Omega \cdot$cm$^{2}$, and a high forward current density of 678.16 A/cm$^{2}$ at 3 V. These results provide essential material and theoretical foundations for the development of $\beta $-Ga$_{2}$O$_{3}$ based high-power electronic devices.
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Received: 15 July 2025
Revised: 26 August 2025
Accepted manuscript online: 09 September 2025
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PACS:
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82.45.Vp
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(Semiconductor materials in electrochemistry)
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82.33.Ya
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(Chemistry of MOCVD and other vapor deposition methods)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62474133, U2241220, and 62304172), the Guangdong Basic and Applied Basic Research Foundation (Grant Nos. 2025A1515011176 and 2021A1515110020), the Opening Project of State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology (Grant No. 2413S111), and the Fundamental Research Funds for the Central Universities of China (Grant No. ZDRC2002). |
Corresponding Authors:
Yun-Long He, Zhan Wang
E-mail: ylhe@xidian.edu.cn;xdwangzhan@163.com
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Cite this article:
Ke Qin(秦柯), Yun-Long He(何云龙), Zhan Wang(王湛), Jing Sun(孙静), Ying Zhou(周颖), Yang Liu(刘洋), Jin-Wei Liu(刘金炜), Zhuo-Wen Huang(黄卓文), Ji-Wei Jiang(江继伟), Zhu Jin(金竹), Hui Zhang(张辉), Xiao-Li Lu(陆小力), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) Effects of different growth conditions on epitaxial growth of (001) Ga2O3 films by MOCVD 2026 Chin. Phys. B 35 048201
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