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Self-powered horizontally structured n-n heterojunction photodetector based on Si-GaN/β-Ga2O3 for UV detection |
| Muzi Li(李木子), Maolin Zhang(张茂林), Xueqiang Ji(季学强), Shan Li(李山), Lili Yang(杨莉莉)†, and Weihua Tang(唐为华)‡ |
| Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China |
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Abstract With the rapid advancement of optoelectronic technology, high-performance photodetectors are increasingly in demand in fields such as environmental monitoring, optical communication, and defense systems, where ultraviolet detection is critical. However, conventional semiconductor materials suffer from limited UV-visible detection capabilities owing to their narrow bandgaps and high dark currents. To address these challenges, wide-bandgap semiconductors have emerged as promising alternatives. Here, we fabricated a horizontally structured n-n heterojunction photodetector by growing $\beta $-Ga$_2$O$_3$ on Si-GaN via plasma-enhanced chemical vapor deposition. The device exhibits a self-powered photocurrent of 3.5 nA at zero bias, enabled by the photovoltaic effect of the space charge region. Under 254-nm and 365-nm illumination, it exhibits rectification behavior, achieving a responsivity of 0.475 mA/W (0 V, 220 μW/cm$^2$ at 254 nm) and 257.6 mA/W ($-5$ V), respectively. Notably, the photodetector demonstrates a high photocurrent-to-dark current ratio of 10$^5$ under $-5$-V bias, highlighting its potential for self-powered and high-performance UV detection applications.
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Received: 19 May 2025
Revised: 22 June 2025
Accepted manuscript online: 11 July 2025
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PACS:
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85.30.-z
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(Semiconductor devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.25.-j
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(Superconducting devices)
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| Fund: Project supported by the Joints Fund of the National Natural Science Foundation of China (Grant No. U23A20349) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 62204126, 62305171, and 62304113). |
Cite this article:
Muzi Li(李木子), Maolin Zhang(张茂林), Xueqiang Ji(季学强), Shan Li(李山), Lili Yang(杨莉莉), and Weihua Tang(唐为华) Self-powered horizontally structured n-n heterojunction photodetector based on Si-GaN/β-Ga2O3 for UV detection 2026 Chin. Phys. B 35 028502
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[1] Kaur D and Kumar M 2021 Adv. Opt. Mater. 9 2002160
[2] Xu J J, Zheng W and Huang F 2019 J. Mater. Chem. C. 7 8753
[3] Xie C, Lu X T, Tong X W, Zhang Z X, Liang F X, Liang L, Luo L B and Wu Y C 2019 Adv. Funct. Mater. 29 1806006
[4] Qin Y, Long S, Dong H, He Q, Jian G, Zhang Y, Hou X, Tan P, Zhang Z, Lv H, Liu Q and Liu M 2019 Chin. Phys. B. 28 018501
[5] Zhang J, Kuang X, Tu R and Zhang S 2024 Adv Colloid Interface Sci. 328 103175
[6] Chu R 2020 Appl. Phys. Lett. 116 090502
[7] Yue J Y, Ji X Q, Li S, Qi X H, Li P G, Wu Z P and Tang W H 2023 Chin. Phys. B 32 016701
[8] Guo D Y, Su Y L, Shi H Z, Li P G, Zhao N, Ye J H, Wang S L, Liu A P, Chen Z W, Li C R and Tang W H 2018 ACS Nano 12 12827
[9] Jiang J L, Luo J S, Ding K, Tang Y, Zhang H, Ye L J, Pang D, Li H and Li W J 2025 Small 21 e2406447
[10] Singh A, Koksal O, Tanen N, McCandless J, Jena D, Xing H and Peelaers H 2020 Appl. Phys. Lett. 117 072103
[11] X S Fang, Z Q Li and Y Hu 2023 J. Inorg. Mater. 38 1055
[12] M X Cheng, S Z Luan, H L Wang and R X Jia 2023 Chin. Phys. B 32 037302
[13] Yang L L, Peng Y S, Liu Z, Zhang M L, Guo Y F, Yang Y and Tang W H 2023 Chin. Phys. B 32 047301
[14] Wu C, Guo D Y, Zhang L Y, Li P G, Zhang F B, Tan C K, Wang S L, Liu A P, Wu F M and Tang W H 2020 Appl. Phys. Lett. 116 072102
[15] Yang L L, Liu Z, Li S, Zhang M L, Xi Z Y, Xu Q, Yan S H, Guo Y F and Tang W H 2024 IEEE Electron Dev. Lett. 45 420
[16] Tauc J, Grigorovici R and Vancu A 1966 Phys. Status Solid B 15 627
[17] Li P G, Shi H Z, Chen K, Guo D Y, Cui W, Zhi Y S, Wang S L, Wu Z P, Chen Z W and Tang W H 2017 J. Mater. Chem. C 5 10562
[18] Liu N, Fang G, Zeng W, Zhou H, Cheng F, Zheng Q, Yuan L, Zou X and Zhao X 2010 ACS Appl. Mater. Interface 2 1973
[19] Wang K, Lian C, Su N, Jena D and Timler J 2007 Appl. Phys. Lett. 91 232117
[20] Zeng H, Wang W, Ivanov I G, Darakchieva V and Sun J 2024 Appl. Phys. Lett. 125 162102
[21] Li S, Zhi Y S, Lu C, Wu C, Yan Z Y, Liu Z, Yang J, Chu X L, Guo D Y, Li P G, Wu Z P and Tang W H 2021 J. Phys. Chem. Lett. 12 447
[22] Kong W Y, Wu G A, Wang K Y, Zhang T F, Zou Y F, Wang D D and Luo L B 2016 Adv. Mater. 28 10725
[23] Guo X C, Hao N H, Guo D Y, Wu Z P, An Y H, Chu X L, Li L H, Li P G, Lei M and Tang W H 2016 J. Alloys Compd. 660 136
[24] Xi Z Y, Liu Z, Yang L L, Tang K, Li L, Shen G H, Zhang M L, Li S, Guo Y F and Tang W H 2023 Appl. Mater. Interfaces 15 40744
[25] Atilgan A, Yildiz A, Harmanci U, Gulluoglu M T and Salim K 2020 Mater. Today Commun. 24 101105
[26] Yu J G, Yu M, Wang Z, Yuan L, Huang Y, Zhang L C, Zhang Y M and Jia R X 2020 IEEE Trans. Electron Dev. 67 3199
[27] Wu C, He H L, Hu H Z, Liu A P, Wang S L, Guo D Y and Wu F M 2023 Journal of Semiconductors 44 58
[28] Wu C 2020 Mater. Today Phys. 17 100335 |
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