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High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure |
| Ying Zhu(朱盈)1,2, Wang Lin(林旺)1,2, Dong-Shuai Li(李东帅)1,2, Liu-An Li(李柳暗)1,2, Xian-Yi Lv(吕宪义)1,2, Qi-Liang Wang(王启亮)1,2,†, and Guang-Tian Zou(邹广田)1,2,‡ |
1. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;
2. Shenzhen Research Institute, Jilin University, Shenzhen 518057, China |
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Abstract The trench diamond junction barrier Schottky (JBS) diode with a sidewall enhanced structure is designed by Silvaco simulation. Comparing with the conventional trench JBS diode, Schottky contact areas are introduced on the sidewall of the trench beside the top cathode. The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit (FOM) value. In addition, the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage. With the optimal parameters of device structure, a high Baliga's FOM value of 2.28 GW/cm2 is designed. Therefore, the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.
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Received: 24 December 2022
Revised: 25 February 2023
Accepted manuscript online: 09 March 2023
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PACS:
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81.05.ug
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(Diamond)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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85.30.Kk
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(Junction diodes)
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88.30.gg
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(Design and simulation)
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| Fund: Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No.2020B0101690001), the Natural Science Foundation of Sichuan Province, China (Grant No.2022NSFSC0886), and the Open Project of State Key Laboratory of Superhard Materials, Jilin Province, China (Grant No.202314). |
Corresponding Authors:
Qi-Liang Wang, Guang-Tian Zou
E-mail: wangqiliang@jlu.edu.cn;gtzou@jlu.edu.cn
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Cite this article:
Ying Zhu(朱盈), Wang Lin(林旺), Dong-Shuai Li(李东帅), Liu-An Li(李柳暗), Xian-Yi Lv(吕宪义), Qi-Liang Wang(王启亮), and Guang-Tian Zou(邹广田) High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure 2023 Chin. Phys. B 32 088101
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