Charge doping induced thermal switches with a high switching ratio in monolayer MoS2

doi:10.1088/1674-1056/add907

Abstract The thermal switch plays a crucial role in regulating system temperature, protecting devices from overheating, and improving energy efficiency. Achieving a high thermal switching ratio is essential for its practical application. In this study, by utilizing first-principles calculations and semi-classical Boltzmann transport theory, it is found that hole doping with an experimentally achievable concentration of $1.83 \times 10^{14}$ cm$^{-2}$ can reduce the lattice thermal conductivity of monolayer MoS$_2$ from 151.79 W$\cdot$m$^{-1}\cdot$K$^{-1}$ to 12.19 W$\cdot$m$^{-1}\cdot$K$^{-1}$, achieving a high thermal switching ratio of 12.5. The achieved switching ratio significantly surpasses previously reported values, including those achieved by extreme strain methods. This phenomenon mainly arises from the enhanced lattice anharmonicity, which is primarily contributed by the S atoms. These results indicate that hole doping is an effective method for tuning the lattice thermal conductivity of materials, and demonstrate that monolayer MoS$_2$ is a potential candidate material for thermal switches.

Keywords: thermal switching ratio thermal conductivity anharmonicity two-dimensional material

Received: 15 March 2025
Revised: 30 April 2025
Accepted manuscript online: 15 May 2025

PACS:	74.25.Kc	(Phonons)
	66.70.-f	(Nonelectronic thermal conduction and heat-pulse propagation in solids;thermal waves)
	65.80.-g	(Thermal properties of small particles, nanocrystals, nanotubes, and other related systems)
	74.25.fc	(Electric and thermal conductivity)

Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. 12104145 and 12374040).

Corresponding Authors: Nan-Nan Luo, Ke-Qiu Chen
E-mail: luonn@hnu.edu.cn;keqiuchen@hnu.edu.cn

Cite this article:

Chen Gui(桂琛), Zhi-Fu Duan(段志福), Chang-Hao Ding(丁长浩), Hao Chen(陈浩), Yuan Yao(姚远), Nan-Nan Luo(罗南南), Jiang Zeng(曾犟), Li-Ming Tang(唐黎明), and Ke-Qiu Chen(陈克求) Charge doping induced thermal switches with a high switching ratio in monolayer MoS₂ 2025 Chin. Phys. B 34 097401

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Charge doping induced thermal switches with a high switching ratio in monolayer MoS2

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Charge doping induced thermal switches with a high switching ratio in monolayer MoS₂