Anomalous valley Hall effect in two-dimensional valleytronic materials

doi:10.1088/1674-1056/ad1c59

Abstract The anomalous valley Hall effect (AVHE) can be used to explore and utilize valley degrees of freedom in materials, which has potential applications in fields such as information storage, quantum computing and optoelectronics. AVHE exists in two-dimensional (2D) materials possessing valley polarization (VP), and such 2D materials usually belong to the hexagonal honeycomb lattice. Therefore, it is necessary to achieve valleytronic materials with VP that are more readily to be synthesized and applicated experimentally. In this topical review, we introduce recent developments on realizing VP as well as AVHE through different methods, i.e., doping transition metal atoms, building ferrovalley heterostructures and searching for ferrovalley materials. Moreover, 2D ferrovalley systems under external modulation are also discussed. 2D valleytronic materials with AVHE demonstrate excellent performance and potential applications, which offer the possibility of realizing novel low-energy-consuming devices, facilitating further development of device technology, realizing miniaturization and enhancing functionality of them.

Keywords: anomalous valley Hall effect valley polarization valleytronics two-dimensional materials

Received: 07 October 2023
Revised: 21 December 2023
Accepted manuscript online: 09 January 2024

PACS:	73.20.Hb	(Impurity and defect levels; energy states of adsorbed species)
	73.22.-f	(Electronic structure of nanoscale materials and related systems)
	75.50.Pp	(Magnetic semiconductors)
	75.76.+j	(Spin transport effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12274264 and 11674197), the Natural Science Foundation of Shandong Province of China (Grant Nos. ZR2022MA039 and ZR2021MA105), and the Qing-Chuang Science and Technology Plan of Shandong Province of China (Grant No. 2019KJJ014).

Corresponding Authors: Junfeng Ren
E-mail: renjf@sdnu.edu.cn

Cite this article:

Hongxin Chen(陈洪欣), Xiaobo Yuan(原晓波), and Junfeng Ren(任俊峰) Anomalous valley Hall effect in two-dimensional valleytronic materials 2024 Chin. Phys. B 33 047304

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