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Chin. Phys. B, 2024, Vol. 33(11): 118502    DOI: 10.1088/1674-1056/ad8cbc
Special Issue: SPECIAL TOPIC — Stephen J. Pennycook: A research life in atomic-resolution STEM and EELS
SPECIAL TOPIC — Stephen J. Pennycook: A research life in atomic-resolution STEM and EELS Prev   Next  

Polarization pinning at antiphase boundaries in multiferroic YbFeO3

Guodong Ren1, Pravan Omprakash1, Xin Li2, Yu Yun2,3, Arashdeep S. Thind1, Xiaoshan Xu2,4, and Rohan Mishra5,1,†
1 Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA;
2 Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588, USA;
3 Department of Mechanical Engineering & Mechanics, Drexel University, Philadelphia, PA 19104-2875, USA;
4 Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, USA;
5 Department of Mechanical Engineering and Material Science, Washington University in St. Louis, St. Louis, MO 63130, USA
Abstract  The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the multiferroic hexagonal YbFeO$_{3}$. We have directly resolved the atomic structure of a sharp antiphase boundary (APB) in YbFeO$_{3}$ thin films using a combination of aberration-corrected scanning transmission electron microscopy (STEM) and total energy calculations based on density-functional theory (DFT). We find the presence of a layer of FeO$_{6}$ octahedra at the APB that bridges the adjacent domains. STEM imaging shows a reversal in the direction of polarization on moving across the APB, which DFT calculations confirm is structural in nature as the polarization reversal reduces the distortion of the FeO$_{6}$ octahedral layer at the APB. Such APBs in hexagonal perovskites are expected to serve as domain-wall pinning sites and hinder ferroelectric switching of the domains.
Keywords:  hexagonal ferrites      ferroelectric      multiferroic      topological defect      STEM  
Received:  30 August 2024      Revised:  11 October 2024      Accepted manuscript online:  30 October 2024
PACS:  85.70.Ge (Ferrite and garnet devices)  
  64.70.K-  
  75.85.+t (Magnetoelectric effects, multiferroics)  
  91.60.Ed (Crystal structure and defects, microstructure)  
Fund: This work was supported by the National Science Foundation (NSF) (Grant Nos. DMR-2122070, 2145797, and 1454618), and by the Nebraska Center for Energy Sciences Research (NCESR). The Microscopy work was conducted as part of a user project at the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. This work used computational resources through allocation DMR160007 from the Advanced Cyberinfrastructure Coordination Ecosystem: Services & Support (ACCESS) program, which is supported by NSF grants #2138259, #2138286, #2138307, #2137603, and #2138296.
Corresponding Authors:  Rohan Mishra     E-mail:  rmishra@wustl.edu

Cite this article: 

Guodong Ren, Pravan Omprakash, Xin Li, Yu Yun, Arashdeep S. Thind, Xiaoshan Xu, and Rohan Mishra Polarization pinning at antiphase boundaries in multiferroic YbFeO3 2024 Chin. Phys. B 33 118502

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