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Single crystal growth and transport properties of narrow-bandgap semiconductor RhP2 |
| De-Sheng Wu(吴德胜)1,3,†, Ping Zheng(郑萍)1,2, and Jian-Lin Luo(雒建林)1,2,‡ |
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Songshan Lake Materials Laboratory, Dongguan 523808, China;
3 Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China |
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Abstract We report the growth of high-quality single crystals of RhP$_{2}$, and systematically study its structure and physical properties by transport, magnetism, and heat capacity measurements. Single-crystal x-ray diffraction reveals that RhP$_{2}$ adopts a monoclinic structure with the cell parameters a=5.7347(10) Å, b=5.7804(11) Å, and c=5.8222(11) Å, space group $P2_{1}/c$ (No. 14). The electrical resistivity $\rho (T)$ measurements indicate that RhP$_{2}$ exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions, respectively. The temperature-dependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration. We find that RhP$_{2}$ has a high mobility $\mu_{\rm e}\sim210$ cm$^{2}$$\cdot$V$^{-1}$$\cdot$s$^{-1}$ with carrier concentrations $n_{\rm e}\sim 3.3\times 10^{18}$ cm$^{-3}$ at 300 K with a narrow-bandgap feature. The high mobility $\mu_{\rm e}$ reaches the maximum of approximately 340 cm$^{2}$$\cdot$V$^{-1}$$\cdot$s$^{-1}$ with carrier concentrations $n_{\rm e}\sim 2\times 10^{18}$ cm$^{-3}$ at 100 K. No magnetic phase transitions are observed from the susceptibility $\chi (T)$ and specific heat $C_{\rm p}(T)$ measurements of RhP$_{2}$. Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.
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Received: 21 February 2024
Revised: 26 April 2024
Accepted manuscript online:
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PACS:
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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71.28.+d
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(Narrow-band systems; intermediate-valence solids)
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72.15.Eb
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(Electrical and thermal conduction in crystalline metals and alloys)
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| Fund: This work was supported by the National Key Research and Development Program of China (Grant No. 2017YFA0302901), the Strategic Priority Research Program, the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. XDB33010100), the National Natural Science Foundation of China (Grant Nos. 12134018, 11921004, and 11634015), the Foundation of Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, China (Grant No. QD2301005), the Postdoctoral Science Foundation of China (Grant No. 2021M693370), and the Synergetic Extreme Condition User Facility (SECUF). |
Corresponding Authors:
De-Sheng Wu, Jian-Lin Luo
E-mail: dswu@iphy.ac.cn;jlluo@iphy.ac.cn
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Cite this article:
De-Sheng Wu(吴德胜), Ping Zheng(郑萍), and Jian-Lin Luo(雒建林) Single crystal growth and transport properties of narrow-bandgap semiconductor RhP2 2024 Chin. Phys. B 33 088101
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