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Chin. Phys. B, 2024, Vol. 33(11): 118501    DOI: 10.1088/1674-1056/ad6b83
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling

Jia-Li Chen(陈嘉丽), Sai-Yan Chen(陈赛艳)‡, Li Wen(温丽), Xue-Li Cao(曹雪丽), and Mao-Wang Lu(卢卯旺)†
College of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541004, China
Abstract  Combining theory and computation, we explore the Goos-Hänchen (GH) effect for electrons in a single-layered semiconductor microstructure (SLSM) modulated by Dresselhaus spin-orbit coupling (SOC). GH displacement depends on electron spins thanks to Dresselhaus SOC, therefore electron spins can be separated from the space domain and spin-polarized electrons in semiconductors can be realized. Both the magnitude and sign of the spin polarization ratio change with the electron energy, in-plane wave vector, strain engineering and semiconductor layer thickness. The spin polarization ratio approaches a maximum at resonance; however, no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector. More importantly, the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness, giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.
Keywords:  semiconductor spintronics      single-layered semiconductor microstructure (SLSM)      spin-orbit coupling (SOC)      Goos-Hänchen (GH) effect      electron-spin polarization  
Received:  19 May 2024      Revised:  01 August 2024      Accepted manuscript online:  06 August 2024
PACS:  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
  72.80.Ey (III-V and II-VI semiconductors)  
  71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)  
  72.25.Dc (Spin polarized transport in semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62164005).
Corresponding Authors:  Sai-Yan Chen, Mao-Wang Lu     E-mail:  maowanglu@glut.edu.cn;sychen02@126.com

Cite this article: 

Jia-Li Chen(陈嘉丽), Sai-Yan Chen(陈赛艳), Li Wen(温丽), Xue-Li Cao(曹雪丽), and Mao-Wang Lu(卢卯旺) Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling 2024 Chin. Phys. B 33 118501

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