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Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO2 thin films |
| S X Chen(陈思学)1, M M Chen(陈明明)1,†, Y Liu(刘圆)1, D W Cao(曹大威)2, and G J Chen(陈国杰)3 |
1 Department of Microelectronics, Jiangsu University, Zhenjiang 212013, China;
2 Department of Physics, Jiangsu University, Zhenjiang 212013, China;
3 Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, Foshan University, Foshan 528225, China |
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Abstract Ferroelectric HfO$_{2}$ has attracted much attention owing to its superior ferroelectricity at an ultra-thin thickness and good compatibility with Si-based complementary metal-oxide-semiconductor (CMOS) technology. However, the crystallization of polar orthorhombic phase (o-phase) HfO$_{2}$ is less competitive, which greatly limits the ferroelectricity of the as-obtained ferroelectric HfO$_{2}$ thin films. Fortunately, the crystallization of o-phase HfO$_{2}$ can be thermodynamically modulated via interfacial stress engineering. In this paper, the growth of improved ferroelectric Al doped HfO$_{2}$ (HfO$_{2}$:Al) thin films on (111)-oriented Si substrate has been reported. Structural analysis has suggested that nonpolar monoclinic HfO$_{2}$:Al grown on (111)-oriented Si substrate suffered from a strong compressive strain, which promoted the crystallization of (111)-oriented o-phase HfO$_{2}$ in the as-grown HfO$_{2}$:Al thin films. In addition, the in-plane lattice of (111)-oriented Si substrate matches well with that of (111)-oriented o-phase HfO$_{2}$, which further thermally stabilizes the o-phase HfO$_{2}$. Accordingly, an improved ferroelectricity with a remnant polarization (2$P_{\rm r}$) of 26.7 μC/cm$^{2}$ has been obtained. The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO$_{2}$ thin films.
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Received: 28 January 2024
Revised: 22 May 2024
Accepted manuscript online: 24 May 2024
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PACS:
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87.15.Zg
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(Phase transitions)
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64.60.Ej
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(Studies/theory of phase transitions of specific substances)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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61.05.cp
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(X-ray diffraction)
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| Fund: Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, China (Grant No. 2020B1212030010) and Project of Faculty of Agricultural Equipment of Jiangsu University (Grant No. NZXB20210202) are acknowledged. |
Corresponding Authors:
M M Chen
E-mail: andychain@live.cn
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Cite this article:
S X Chen(陈思学), M M Chen(陈明明), Y Liu(刘圆), D W Cao(曹大威), and G J Chen(陈国杰) Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO2 thin films 2024 Chin. Phys. B 33 098701
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