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Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode |
| Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉)†, and Bo Zhang(张波) |
| School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract A novel normally-off double channel reverse conducting (DCRC) HEMT with an integrated MOS-channel diode (MCD) is proposed and investigated by TCAD simulation. The proposed structure has two features: one is double heterojunctions to form dual 2DEG channels named the 1st path and the 2nd path for reverse conduction, and the other is the MCD forming by the trench source metal, source dielectric, and GaN. At the initial reverse conduction stage, the MCD acts as a switch to control the 1st path which would be turned on prior to the 2nd path. Because of the introduction of the 1st path, the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance. Compared with the conventional HEMT (Conv. HEMT), the DCRC-HEMT can obtain a low reverse turn-on voltage (VRT) and its VRT is independent of the gate-source bias (VGS) at the same time. The DCRC-HEMT achieves the VRT of 0.62 V, which is 59.7% and 75.9% lower than that of the Conv. HEMT at VGS = 0 V and -1 V, respectively. In addition, the forward conduction capability and blocking characteristics almost remain unchanged. In the end, the key fabrication flows of DCRC-HEMT are presented.
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Received: 25 February 2023
Revised: 22 May 2023
Accepted manuscript online: 28 June 2023
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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51.50.+v
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(Electrical properties)
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| Fund: Project supported by the National Natural Science Foundations of China (Grant Nos. 61874149 and U20A20208) and the Outstanding Youth Science and Technology Foundation of China (Grant No. 2018-JCJQ-ZQ-060). |
Corresponding Authors:
Xiaorong Luo
E-mail: xrluo@uestc.edu.cn
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Cite this article:
Xintong Xie(谢欣桐), Cheng Zhang(张成), Zhijia Zhao(赵智家), Jie Wei(魏杰),Xiaorong Luo(罗小蓉), and Bo Zhang(张波) Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode 2023 Chin. Phys. B 32 098506
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[1] Chen K J, Häberlen O, et al. 2017 IEEE Transactions on Electron Devices 64 779
[2] Rupp R, Laska T, Häberlen O, et al. 2014 IEEE International Electron Devices Meeting, December 15-17, 2014, San Francisco, CA, USA, p. 2.3.1
[3] Chow T P and Tyagi R 1993 International Symposium on Power Semiconductor Devices and ICs, May 18-20, 1993, Monterey, CA, USA, p. 84
[4] Mishra U K, Parikh P and Wu Y F 2002 Proc. IEEE 90 1022
[5] Linder S 2006 Power semiconductors, 1st edn. (New York: EPFL Press)
[6] Lidow A, De Rooij M, et al. 2019 GaN transistors for efficient power conversion, 3rd edn. (Chichester: John Wiley and Sons)
[7] Sorensen C, Fogsgaard M L, et al. 2015 International Symposium on Power Electronics for Distributed Generation Systems, June 22-25, 2015, Aachen, Germany, p. 1
[8] Morita T, Tamura S, et al. 2011 IEEE Applied Power Electronics Conference and Exposition, March 6-11, 2011, Fort Worth, TX, USA, p. 481
[9] Das J, Everts J, et al. 2011 IEEE Electron Device Lett. 32 1370
[10] Reiner R, Waltereit P, et al. 2015 IEEE International Symposium on Power Semiconductor Devices & ICs, May 10-14, 2015, Hong Kong, China, p. 45
[11] Zhu R, Zhou Q, et al. 2018 IEEE International Symposium on Power Semiconductor Devices and ICs, May 13-17, 2018, Chicago, IL, USA, p. 212
[12] Kachi T, Kanechika M and Uesugi T 2011 IEEE Compound Semiconductor Integrated Circuit Symposium, October 16-19, 2011, Waikoloa, HI, USA, p. 1
[13] Park B R, Lee J G and Cha H Y 2013 Appl. Phys. Expr. 6 031001
[14] Li S, Hou B, et al. 2021 IEEE Transactions on Electron Device 68 931
[15] Lei J, Wei J, et al. 2019 IEEE Transactions on Electron Devices 66 2106
[16] Yi B, Wu Z, et al. 2021 IEEE Transactions on Electron Devices 68 6039
[17] Lei J, Wei J, et al. 2017 IEEE International Electron Devices Meeting, December 02-06, 2017, San Francisco, CA, USA, p. 25.2.1
[18] Zhang L, Wei J, et al. 2020 IEEE Electron Device Lett. 41 341
[19] Zhang L, Wei J, et al. 2020 International Symposium on Power Semiconductor Devices and ICs, September 13-18, 2020, Vienna, Austria, p. 521
[20] Wang T, Ma J, et al. 2018 IEEE Electron Device Lett. 39 1038
[21] Hashizume T, Kotani J and Hasegawa H. 2004 Appl. Phys. Lett. 84 4884
[22] Sabui G, Parbrook P J, et al. 2016 AIP Advances 6 055006
[23] Saito Y, Tsurumaki R, et al. 2017 IEEE Transactions on Device and Materials Reliability 18 46
[24] Han S W, Song J, and Chu R. 2020 IEEE Transactions on Electron Devices 67 69
[25] Ibbetson J P, Fini P T, et al. 2000 Appl. Phys. Lett. 77 250
[26] Zhou Q, Chen B, et al. 2015 IEEE Transactions on Electron Devices 62 776
[27] Liu S, Yang S, et al. 2014 IEEE Electron Device Lett. 35 723 |
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