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Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gain×bandwidth product |
| Shuai Wang(王帅)1,2, Han Ye(叶焓)1,2, Li-Yan Geng(耿立妍)1,2, Fan Xiao(肖帆)1,2, Yi-Miao Chu(褚艺渺)1,2, Yu Zheng(郑煜)1,2, and Qin Han(韩勤)1,2,† |
1 Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode (APD) by computational simulations and experimental results. The APD adopts the structure of separate absorption, charge, and multiplication (SACM) with top-illuminated. Computational simulations demonstrate how edge breakdown effect is suppressed in the guardring-free structure. The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gain×bandwidth (GB) product. The dark current is 3 nA at 0.9Vbr, and the unit responsivity is 0.4 A/W. The maximum 3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55 upmu m.
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Received: 28 April 2023
Revised: 06 July 2023
Accepted manuscript online: 11 July 2023
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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| Fund: This study was funded by the National Key R&D Program of China (Grant No. 2020YFB1805701) and the National Natural Foundation of China (Grant No. 61934003). |
Corresponding Authors:
Qin Han
E-mail: hanqin@semi.ac.cn
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Cite this article:
Shuai Wang(王帅), Han Ye(叶焓), Li-Yan Geng(耿立妍), Fan Xiao(肖帆), Yi-Miao Chu(褚艺渺), Yu Zheng(郑煜), and Qin Han(韩勤) Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gain×bandwidth product 2023 Chin. Phys. B 32 098507
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[1] Campbell J C 2016 Journal of Lightwave Technology 34 278
[2] Waldrop J R, Kraut E A, Farley C W and Grant R W 1991 J. Appl. Phys. 69 372
[3] Wang H, Yang X, Wang R, He T and Liu K 2020 Opt. Express 28 16211
[4] Yagyu E, Ishimura E, Nakaji M, Ihara S, Mikami Y, Itamoto H, Aoyagi T, Yoshiara K and Tokuda Y 2009 Journal of Lightwave Technology 27 1011
[5] Lahrichi M, Derouin E, Carpentier D, Lagay N, Decobert J, Glastre G and Achouche M 2009 35th European Conference on Optical Communication (ECOC), 2009 Sep 20-24, Vienna, AUSTRIA, p. 1
[6] Levine B F, Sacks R N, Ko J, Jazwiecki M, Valdmanis J A, Gunther D and Meier J H 2006 IEEE Photonics Technology Letters 18 1898
[7] Li B, Lv Q Q, Cui R, Yin W H, Yang X H and Han Q 2015 IEEE Photonics Technology Letters 27 34
[8] Nada M, Muramoto Y, Yokoyama H, Ishibashi T and Kodama S 2012 Electron. Lett. 48 397
[9] Rouvie A, Carpentier D, Lagay N, Decobert J, Pommereau F and Achouche M 2008 IEEE Photonics Technology Letters 20 455
[10] Tan L J J, Ong D S G, Ng J S, Tan C H, Jones S K, Qian Y and David J P R 2010 IEEE Journal of Quantum Electronics 46 1153
[11] Campbell J C and Host C 2006 Conference on Optical Fiber Communications/National Fiber Optic Engineers Conference, 2006 Mar 05-10, Anaheim, CA, p. 2485
[12] Nada M, Yamada Y and Matsuzaki H 2018 IEEE Journal of Selected Topics in Quantum Electronics 24 1
[13] Campbell J C 2008 Optical Fiber Telecommunications V1A, December 31, 2008, San Francisco, CA, USA: Academic, p. 221
[14] Nada M, Muramoto Y, Yokoyama H, Shigekawa N, Ishibashi T and Kodama S 2012 Jpn. J. Appl. Phys. 51 02BG03
[15] Chen Y H, Wun J M, Wu S L, Chao R L, Huang J J S, Jan Y H, Chen H S, Ni C J, Chang H S, Chou E and Shi J W 2018 IEEE Journal of Selected Topics in Quantum Electronics 24 1
[16] Tosi A, Calandri N, Sanzaro M and Acerbi F 2014 IEEE Journal of Selected Topics in Quantum Electronics 20 192
[17] Jiang X D, Itzler M, O'Donnell K, Entwistle M, Owens M, Slomkowski K and Rangwala S 2015 IEEE Journal of Selected Topics in Quantum Electronics 21 5
[18] Wang S, Ye H, Geng L Y, Lu Z Q, Xiao F, Xiao F and Han Q 2022 Journal of Electronic Materials 51 2692
[19] Nada M, Muramoto Y, Yokoyama H, Ishibashi T and Matsuzaki H 2014 Journal of Lightwave Technology 32 1543
[20] Nada M, Yoshimatsu T, Nakajima F, Sano K and Matsuzaki H 2019 Journal of Lightwave Technology 37 260
[21] Achouche M, Decobert J, Vaissiere N, Martin F, Fortin C, Paret J F, Lanteri D, Mekhazni K, Gariah H, Caillaud C and Blache F 2019 Optical Fiber Communications Conference and Exhibition (OFC), 2019 Mar 03-07, San Diego, CA, pp. 1-3
[22] Lahrichi M, Glastre G, Derouin E, Carpentier D, Lagay N, Decobert J and Achouche M 2010 IEEE Photonics Technology Letters 22 1373
[23] Liu Y, Forrest S R, Ban V S, Woodruff K M, Colosi J, Erikson G C, Lange M J and Olsen G H 1988 Appl. Phys. Lett. 53 1311
[24] Maruyama T, Narusawa F, Kudo M, Tanaka M, Saito Y and Nomura A 2002 Opt. Eng. 41 395 |
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