Research on self-supporting T-shaped gate structure of GaN-based HEMT devices

doi:10.1088/1674-1056/acaa27

Abstract A self-supporting T-shaped gate (SST-gate) GaN device and process method using electron beam lithography are proposed. An AlGaN/GaN high-electron-mobility transistor (HEMT) device with a gate length of 100 nm is fabricated by this method. The current gain cutoff frequency ($f_{\rm T})$ is 60 GHz, and the maximum oscillation frequency ($f_{\rm max})$ is 104 GHz. The current collapse has improved by 13% at static bias of ($V_{\rm GSQ}$, $V_{\rm DSQ}) = (-8 {\rm V}, 10 {\rm V})$, and gate manufacturing yield has improved by 17% compared with the traditional floating T-shaped gate (FT-gate) device.

Keywords: GaN high-electron-mobility transistor (HEMT) self-supporting T-gate

Received: 07 September 2022
Revised: 06 November 2022
Accepted manuscript online: 09 December 2022

PACS:	73.61.Ey	(III-V semiconductors)
	85.30.Tv	(Field effect devices)
	52.77.Dq	(Plasma-based ion implantation and deposition)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62188102), the Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2022JM-316), and the Fund from the Ministry of Education of China (Grant No. 8091B042112).

Corresponding Authors: Peng Zhang
E-mail: pengzhang@xidian.edu.cn

Cite this article:

Peng Zhang(张鹏), Miao Li(李苗), Jun-Wen Chen(陈俊文), Jia-Zhi Liu(刘加志), and Xiao-Hua Ma(马晓华) Research on self-supporting T-shaped gate structure of GaN-based HEMT devices 2023 Chin. Phys. B 32 067305

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Research on self-supporting T-shaped gate structure of GaN-based HEMT devices

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