1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; 2 School of Advance Material and Nanotechnology, Xidian University, Xi'an 710071, China
Abstract A self-supporting T-shaped gate (SST-gate) GaN device and process method using electron beam lithography are proposed. An AlGaN/GaN high-electron-mobility transistor (HEMT) device with a gate length of 100 nm is fabricated by this method. The current gain cutoff frequency ( is 60 GHz, and the maximum oscillation frequency ( is 104 GHz. The current collapse has improved by 13% at static bias of (, , and gate manufacturing yield has improved by 17% compared with the traditional floating T-shaped gate (FT-gate) device.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62188102), the Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2022JM-316), and the Fund from the Ministry of Education of China (Grant No. 8091B042112).
Peng Zhang(张鹏), Miao Li(李苗), Jun-Wen Chen(陈俊文), Jia-Zhi Liu(刘加志), and Xiao-Hua Ma(马晓华) Research on self-supporting T-shaped gate structure of GaN-based HEMT devices 2023 Chin. Phys. B 32 067305
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