High-performance vertical GaN field-effect transistor with an integrated self-adapted channel diode for reverse conduction

doi:10.1088/1674-1056/ac8ce6

Abstract A vertical GaN field-effect transistor with an integrated self-adapted channel diode (CD-FET) is proposed to improve the reverse conduction performance. It features a channel diode (CD) formed between a trench source on the insulator and a P-type barrier layer (PBL), together with a P-shield layer under the trench gate. At forward conduction, the CD is pinched off due to depletion effects caused by both the PBL and the metal-insulator-semiconductor structure from the trench source, without influencing the on-state characteristic of the CD-FET. At reverse conduction, the depletion region narrows and thus the CD turns on to achieve a very low turn-on voltage ($V_{\rm F}$), preventing the inherent body diode from turning on. Meanwhile, the PBL and P-shield layer can modulate the electric field distribution to improve the off-state breakdown voltage (${\rm BV}$). Moreover, the P-shield not only shields the gate from a high electric field but also transforms part of $C_{\rm GD}$ to $C_{\rm GS}$ so as to significantly reduce the gate charge ($Q_{\rm GD}$), leading to a low switching loss ($E_{\rm switch}$). Consequently, the proposed CD-FET achieves a low $V_{\rm F}$ of 1.65 V and a high ${\rm BV}$ of 1446 V, and $V_{\rm F}$, $Q_{\rm GD}$ and $E_{\rm switch}$ of the CD-FET are decreased by 49%, 55% and 80%, respectively, compared with those of a conventional metal-oxide-semiconductor field-effect transistor (MOSFET).

Keywords: GaN field effect transistor reverse conduction integrated diode turn-on voltage

Received: 03 July 2022
Revised: 19 August 2022
Accepted manuscript online: 26 August 2022

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	51.50.+v	(Electrical properties)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61874149 and U20A20208) and the Outstanding Youth Science and Technology Foundation of China (Grant No. 2018-JCJQ-ZQ-060).

Corresponding Authors: Xiaorong Luo
E-mail: xrluo@uestc.edu.cn

Cite this article:

Siyu Deng(邓思宇), Dezun Liao(廖德尊), Jie Wei(魏杰), Cheng Zhang(张成),Tao Sun(孙涛), and Xiaorong Luo(罗小蓉) High-performance vertical GaN field-effect transistor with an integrated self-adapted channel diode for reverse conduction 2023 Chin. Phys. B 32 078503

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[1]	Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Chin. Phys. B, 2023, 32(2): 027302.
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High-performance vertical GaN field-effect transistor with an integrated self-adapted channel diode for reverse conduction

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