Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer

doi:10.1088/1674-1056/acc7f4

Abstract GaN-based p-channel heterostructure field-effect transistors (p-HFETs) face significant constraints on on-state currents compared with n-channel high electron mobility transistors. In this work, we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs. The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations, including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer, as well as the thickness and Mg-doping concentration in the p-GaN insertion layer. With the help of the p-GaN insertion layer, the C-doping concentration in the GaN buffer layer can be reduced, while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time. This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone.

Keywords: GaN double-channel heterostructure field-effect transistors p-GaN insertion layer C-doped buffer layer

Received: 19 September 2022
Revised: 23 February 2023
Accepted manuscript online: 28 March 2023

PACS:	81.05.Ea	(III-V semiconductors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62104184, 62234009, 62090014, 62188102, 62104178, and 62104179), the Fundamental Research Funds for the Central Universities of China (Grant Nos. YJSJ23019, XJSJ23047, and ZDRC2002), the China National Postdoctoral Program for Innovative Talents (Grant No. BX20200262), and the China Postdoctoral Science Foundation (Grant No. 2021M692499)

Corresponding Authors: Bin Hou, Ling Yang
E-mail: bhou@xidian.edu.cn;yangling@xidian.edu.cn

Cite this article:

Xuerui Niu(牛雪锐), Bin Hou(侯斌), Meng Zhang(张濛), Ling Yang(杨凌), Mei Wu(武玫), Xinchuang Zhang(张新创), Fuchun Jia(贾富春), Chong Wang(王冲), Xiaohua Ma(马晓华), and Yue Hao(郝跃) Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer 2023 Chin. Phys. B 32 108101

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Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer

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