Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

doi:10.1088/1674-1056/acb916

Abstract Quantum dots (QDs) have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency, narrow half-peak width, and continuously adjustable emitting wavelength. QDs light emitting diodes (QLEDs) are expected to become the next generation commercial display technology. This paper reviews the progress of QLED from physical mechanism, materials, to device engineering. The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Keywords: quantum dots light emitting diodes device engineering

Received: 04 November 2022
Revised: 10 January 2023
Accepted manuscript online: 06 February 2023

PACS:	85.35.-p	(Nanoelectronic devices)
	61.46.Df	(Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))

Fund: Project supported by Leading innovation and entrepreneurship team of Zhejiang Province of China (Grant No.2021R01003), Science and Technology Innovation 2025 Major Project of Ningbo (Grant No.2022Z085), Ningbo 3315 Programme (Grant No.2020A-01-B), YONGJIANG Talent Introduction Programme (Grant No.2021A-038-B), and Zhujiang Talent Programme (Grant No.2016LJ06C621).

Corresponding Authors: Chaoyu Xiang, Lei Qian
E-mail: xiangchaoyu@nimte.ac.cn;qian_lei@126.com

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Changfeng Han(韩长峰), Ruoxi Qian(钱若曦), Chaoyu Xiang(向超宇), and Lei Qian(钱磊) Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications 2023 Chin. Phys. B 32 128506

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