High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers

doi:10.1088/1674-1056/acb491

Abstract Here we report 1.3 upmu m electrical injection lasers based on InAs/GaAs quantum dots (QDs) grown on a GaAs substrate, which can steadily work at 110 ℃ without visible degradation. The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy. The density of InAs QDs in the active region is increased from 3.8×10¹⁰ cm^-2 to 5.9×10¹⁰ cm^-2. As regards laser performance, the maximum output power of devices with low-density QDs as the active region is 65 mW at room temperature, and that of devices with the high-density QDs is 103 mW. Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110 ℃.

Keywords: InAs/GaAs quantum dots high-operating-temperature laser molecular beam epitaxy (MBE)

Received: 11 October 2022
Revised: 19 December 2022
Accepted manuscript online: 19 January 2023

PACS:	81.05.Ea	(III-V semiconductors)
	81.07.Ta	(Quantum dots)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	81.70.-q	(Methods of materials testing and analysis)

Fund: Project supported by the Science and Technology Program of Guangzhou (Grant No. 202103030001), the KeyArea Research and Development Program of Guangdong Province (Grant No. 2018B030329001), the National Natural Science Foundation of China (Grant Nos. 62035017, 61505196, and 62204238), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790580 and 61790581), the Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation Project (Grant No. 21SH06), Jincheng Key Research and Development Project (Grant No. 20210209), the Key R&D Program of Shanxi Province (Grant No. 202102030201004), the R&D Program of Guangdong Province (Grant Nos. 2018B030329001 and 2020B0303020001), Shenzhen Technology Research Project (Grant No. JSGG20201102145200001), and the National Key Technologies R&D Program of China (Grant No. 2018YFA0306100).

Corresponding Authors: Zhi-Chuan Niu
E-mail: zcniu@semi.ac.cn

Cite this article:

Xiang-Bin Su(苏向斌), Fu-Hui Shao(邵福会), Hui-Ming Hao(郝慧明), Han-Qing Liu(刘汗青),Shu-Lun Li(李叔伦), De-Yan Dai(戴德炎), Xiang-Jun Shang(尚向军), Tian-Fang Wang(王天放),Yu Zhang(张宇), Cheng-Ao Yang(杨成奥), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥),Ying Ding(丁颖), and Zhi-Chuan Niu(牛智川) High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers 2023 Chin. Phys. B 32 098103

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High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers

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