1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; 3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China; 4 James Watt School of Engineering, University of Glasgow, Glasgow, G12 8LT, UK
Abstract Here we report 1.3 upmu m electrical injection lasers based on InAs/GaAs quantum dots (QDs) grown on a GaAs substrate, which can steadily work at 110 ℃ without visible degradation. The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy. The density of InAs QDs in the active region is increased from 3.8×1010 cm-2 to 5.9×1010 cm-2. As regards laser performance, the maximum output power of devices with low-density QDs as the active region is 65 mW at room temperature, and that of devices with the high-density QDs is 103 mW. Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110 ℃.
Fund: Project supported by the Science and Technology Program of Guangzhou (Grant No. 202103030001), the KeyArea Research and Development Program of Guangdong Province (Grant No. 2018B030329001), the National Natural Science Foundation of China (Grant Nos. 62035017, 61505196, and 62204238), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790580 and 61790581), the Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation Project (Grant No. 21SH06), Jincheng Key Research and Development Project (Grant No. 20210209), the Key R&D Program of Shanxi Province (Grant No. 202102030201004), the R&D Program of Guangdong Province (Grant Nos. 2018B030329001 and 2020B0303020001), Shenzhen Technology Research Project (Grant No. JSGG20201102145200001), and the National Key Technologies R&D Program of China (Grant No. 2018YFA0306100).
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Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties Zhen-Hua Li(李振华), Peng-Fei Shao(邵鹏飞), Gen-Jun Shi(施根俊), Yao-Zheng Wu(吴耀政), Zheng-Peng Wang(汪正鹏), Si-Qi Li(李思琦), Dong-Qi Zhang(张东祺), Tao Tao(陶涛), Qing-Jun Xu(徐庆君), Zi-Li Xie(谢自力), Jian-Dong Ye(叶建东), Dun-Jun Chen(陈敦军), Bin Liu(刘斌), Ke Wang(王科), You-Dou Zheng(郑有炓), and Rong Zhang(张荣). Chin. Phys. B, 2022, 31(1): 018102.
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