Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors

doi:10.1088/1674-1056/ac2d1b

Abstract The defect-related photoconductivity gain and persistent photoconductivity (PPC) observed in Ga₂O₃ Schottky photodetectors lead to a contradiction between high responsivity and fast recovery speed. In this work, a metal-semiconductor-metal (MSM) Schottky photodetector, a unidirectional Schottky photodetector, and a photoconductor were constructed on Ga₂O₃ films. The MSM Schottky devices have high gain (> 13) and high responsivity (> 2.5 A/W) at 230-250 nm, as well as slow recovery speed caused by PPC. Interestingly, applying a positive pulse voltage to the reverse-biased Ga₂O₃/Au Schottky junction can effectively suppress the PPC in the photodetector, while maintaining high gain. The mechanisms of gain and PPC do not strictly follow the interface trap trapping holes or the self-trapped holes models, which is attributed to the correlation with ionized oxygen vacancies in the Schottky junction. The positive pulse voltage modulates the width of the Schottky junction to help quickly neutralize electrons and ionized oxygen vacancies. The realization of suppression PPC functions and the establishment of physical models will facilitate the realization of high responsivity and fast response Schottky devices.

Keywords: Ga₂O₃ Schottky photodetector persistent photoconductivity high gain pulse voltage oxygen vacancy

Received: 07 July 2021
Revised: 25 August 2021
Accepted manuscript online: 06 October 2021

PACS:	61.72.jd	(Vacancies)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51872043, 51732003, and 51902049), the National Key R&D Program of China (Grant No. 2019YFA0705202), Natural Science Foundation of Jilin Province, China (Grant No. 20200201076JC), the National Basic Research Program of China (Grant No. 2012CB933703), and "111" Project (Grant No. B13013).

Corresponding Authors: Jiangang Ma
E-mail: majg@nenu.edu.cn

Cite this article:

Haitao Zhou(周海涛), Lujia Cong(丛璐佳), Jiangang Ma(马剑钢), Bingsheng Li(李炳生), Haiyang Xu(徐海洋), and Yichun Liu(刘益春) Suppression of persistent photoconductivity in high gain Ga₂O₃ Schottky photodetectors 2021 Chin. Phys. B 30 126104

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Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors

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Suppression of persistent photoconductivity in high gain Ga₂O₃ Schottky photodetectors