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Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy |
| Xiang-Peng Zhou(周祥鹏)1,3, Hai-Bing Qiu(邱海兵)2,3, Wen-Xian Yang(杨文献)3,†, Shu-Long Lu(陆书龙)3, Xue Zhang(张雪)2,3, Shan Jin(金山)3, Xue-Fei Li(李雪飞)2,3, Li-Feng Bian(边历峰)1,3,‡, and Hua Qin(秦华)3 |
1 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China;
2 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
3 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China |
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Abstract AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs grown on FS-GaN substrates, with the peak current densities (Jp) of 175-700 kA/cm2 and peak-to-valley current ratios (PVCRs) of 1.01-1.21. Two resonant peaks were also observed for some RTDs at room temperature. The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically, showing that lower dislocation densities, flatter surface morphology, and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.
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Received: 11 March 2021
Revised: 27 April 2021
Accepted manuscript online: 26 May 2021
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PACS:
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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| Fund: Project supported by the National Key R&D Program of China (Grant No. 2018YFB0406600), the National Natural Science Foundation of China (Grant Nos. 61875224, 61804163, and 61827823), Key Laboratory of Microelectronic Devices and Integration Technology, Chinese Academy of Sciences (Grant No. Y9TAQ21), Key Laboratory of Nano-devices and Applications, Chinese Academy of Sciences (Grant No. Y8AAQ21001), and Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (Grant No. DH202011). |
Corresponding Authors:
Wen-Xian Yang, Li-Feng Bian
E-mail: wxyang2014@sinano.ac.cn;lfbian2006@sinano.ac.cn
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Cite this article:
Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华) Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy 2021 Chin. Phys. B 30 127301
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[1] Davies A G, Burnett A D, Fan W, Linfield E H and Cunningham J E 2008 Mater. Today 11 18
[2] Tonouchi M 2007 Nat. Photon. 1 97
[3] Hosako I, Sekine N, Patrashin M, Saito S, Fukunaga K, Kasai Y, Baron P, Seta T, Mendrok J, Ochiai S and Yasuda H 2007 Proc. IEEE 95 1611
[4] Kanaya H, Sogabe R, Maekawa T, Suzuki S and Asada M 2014 J. Infrared, Millimeter, and Terahertz Waves 35 425
[5] Tang W X, Hao R H, Chen F, Yu G H and Zhang B S 2018 Acta Phys. Sin. 67 198501 (in Chinese)
[6] Guo H Y, Lv Y J, Gu G D, Dun S B, Fang Y L, Zhang Z R, Tan X, Song X B, Zhou X Y and Feng Z H 2015 Chin. Phys. Lett. 32 118501
[7] Egorkin V I, Il'ichev E A, Zhuravlev M N, Burzin S B and Shmelev S S 2014 Semiconductors 48 1747
[8] Chen H, Yang L a and Hao Y 2014 J. Appl. Phys. 116 074510
[9] Li D, Tang L, Edmunds C, Shao J, Gardner G, Manfra M J and Malis O 2012 Appl. Phys. Lett. 100 252105
[10] Boucherit M, Soltani A, Monroy E, Rousseau M, Deresmes D, Berthe M, Durand C and De Jaeger J C 2011 Appl. Phys. Lett. 99 182109
[11] Suzuki S, Asada M, Teranishi A, Sugiyama H and Yokoyama H 2010 Appl. Phys. Lett. 97 242102
[12] Bayram C, Vashaei Z and Razeghi M 2010 Appl. Phys. Lett. 97 181109
[13] Leconte S, Golka S, Pozzovivo G, Strasser G, Remmele T, Albrecht M and Monroy E 2008 Phys. Status Solidi C 5 431
[14] Hermann M, Monroy E, Helman A, Baur B, Albrecht M, Daudin B, Ambacher O, Stutzmann M and Eickhoff M 2004 Phys. Status Solidi C 1 2210
[15] Belyaev A E, Makarovsky O, Walker D J, Eaves L, Foxon C T, Novikov S V, Zhao L X, Dykeman R I, Danylyuk S V, Vitusevich S A, Kappers M J, Barnard J S and Humphreys C J 2004 Physica E 21 752
[16] Foxon C T, Novikov S V, Belyaev A E, Zhao L X, Makarovsky O, Walker D J, Eaves L, Dykeman R I, Danylyuk S V, Vitusevich S A, Kappers M J, Barnard J S and Humphreys C J 2003 Phys. Status Solidi C 0 2389
[17] Kikuchi A, Bannai R, Kishino K, Lee C-M and Chyi J-I 2002 Appl. Phys. Lett. 81 1729
[18] Growden T A, Storm D F, Zhang W, Brown E R, Meyer D J, Fakhimi P and Berger P R 2016 Appl. Phys. Lett. 109 083504
[19] Bayram C, Vashaei Z and Razeghi M 2010 Appl. Phys. Lett. 96 042103
[20] Golka S, Pflügl C, Schrenk W, Strasser G, Skierbiszewski C, Siekacz M, Grzegory I and Porowski S 2006 Appl. Phys. Lett. 88 172106
[21] Kikuchi A, Bannai R and Kishino K 2001 Phys. Status Solidi A 188 187
[22] Encomendero J, Yan R, Verma A, Islam S M, Protasenko V, Rouvimov S, Fay P, Jena D and Xing H G 2018 Appl. Phys. Lett. 112 103101
[23] Cornuelle E M, Growden T A, Storm D F, Brown E R, Zhang W, Downey B P, Gokhale V, Ruppalt L B, Champlain J G, Peri P, McCartney M R, Smith D J, Meyer D J and Berger P R 2020 AIP Adv. 10 055307
[24] Wang D, Su J, Chen Z, Wang T, Yang L, Sheng B, Lin S, Rong X, Wang P, Shi X, Tan W, Zhang J, Ge W, Shen B, Liu Y and Wang X 2019 Adv. Electron. Mater. 5 1800651
[25] Wang D, Chen Z Y, Wang T, Yang L Y, Sheng B W, Liu H P, Su J, Wang P, Rong X, Cheng J Y, Shi X Y, Tan W, Guo S P, Zhang J, Ge W K, Shen B and Wang X Q 2019 Appl. Phys. Lett. 114 073503
[26] Wang D, Chen Z, Su J, Wang T, Zhang B, Rong X, Wang P, Tan W, Guo S, Zhang J, Shen B and Wang X 2020 Adv. Funct. Mater. 31 2007216
[27] Growden T A, Cornuelle E M, Storm D F, Zhang W, Brown E R, Whitaker L M, Daulton J W, Molnar R, Meyer D J and Berger P R 2019 Appl. Phys. Lett. 114 203503
[28] Cho Y, Encomendero J, Ho S T, Xing H G and Jena D 2020 Appl. Phys. Lett. 117 143501
[29] Zhang H, Xue J, Fu Y, Li L, Sun Z, Yao J, Liu F, Zhang K, Ma X, Zhang J and Hao Y 2021 J. Appl. Phys. 129 014502
[30] Lin S, Wang D, Tong Y, Shen B and Wang X 2020 J. Phys. D:Appl. Phys. 53 253002
[31] Matejova J S, Horak L, Minarik P, Holy V, Grzanka E, Domagala J and Leszczynski M 2021 J. Appl. Crystallography 54 62
[32] Ali A H, Shuhaimi A, Hassan Z and Yusof Y 2013 International Conference on X-Ray and Related Technique in Research and Industry (ICXRI 2012), July 3-5, 2012, Pulau Pinang, Malaysia, p. 22
[33] Kraus A, Hammadi S, Hisek J, Buss R, Joenen H, Bremers H, Rossow U, Sakalauskas E, Goldhahn R and Hangleiter A 2011 J. Cryst. Growth 323 72
[34] Grier A, Valavanis A, Edmunds C, Shao J, Cooper J D, Gardner G, Manfra M J, Malis O, Indjin D, Ikonic Z and Harrison P 2015 J. Appl. Phys. 118 224308
[35] Surender S, Pradeep S, Prabakaran K, Sumithra S M, Singh S and Baskar K 2018 J. Alloys Compd. 734 48
[36] Yang L A, He H, Mao W and Hao Y 2011 Appl. Phys. Lett. 99 153501
[37] Wang X, Chen L L, Cao Y R, Yang Q S, Zhu P M, Yang G F, Wang F X, Yan D W and Gu X F 2018 Acta Phys. Sin. 67 177202 (in Chinese)
[38] Chen Z, Zhang Y and Zhao H 2020 Opt. Express 28 26651 |
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