GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers
Yi Zhang(张一)1,2, Cheng-Ao Yang(杨成奥)1,2, Jin-Ming Shang(尚金铭)1,2, Yi-Hang Chen(陈益航)1,2, Tian-Fang Wang(王天放)1,2, Yu Zhang(张宇)1,2, Ying-Qiang Xu(徐应强)1,2, Bing Liu(刘冰)3, and Zhi-Chuan Niu(牛智川)1,2,3,†
1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; 2 College of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; 3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
Abstract We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength. The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector. The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper. And the quantum well cascade laser with 100-μm-wide, 2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature. The characteristic temperature T0 is estimated at above 60 K.
Fund: Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 61790581) and the Key Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0303020001).
Yi Zhang(张一), Cheng-Ao Yang(杨成奥), Jin-Ming Shang(尚金铭), Yi-Hang Chen(陈益航), Tian-Fang Wang(王天放), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Bing Liu(刘冰), and Zhi-Chuan Niu(牛智川) GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers 2021 Chin. Phys. B 30 094204
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Strain compensated type II superlattices grown by molecular beam epitaxy Chao Ning(宁超), Tian Yu(于天), Rui-Xuan Sun(孙瑞轩), Shu-Man Liu(刘舒曼), Xiao-Ling Ye(叶小玲), Ning Zhuo(卓宁), Li-Jun Wang(王利军), Jun-Qi Liu(刘俊岐), Jin-Chuan Zhang(张锦川), Shen-Qiang Zhai(翟慎强), and Feng-Qi Liu(刘峰奇). Chin. Phys. B, 2023, 32(4): 046802.
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